絲印：FCH47N60；Package：TO-247-3LD；MOSFET ??N-Channel 600 V, 47 A, 79 m

Description SUPERFET? is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on?resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide s

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絲?。?strong>FCH47N60；Package：TO-247-3LD；MOSFET ??N-Channel 600 V, 47 A, 79 m

Description SUPERFET? is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on?resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide s

文件：668.55 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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600V N-Channel MOSFET

Description SuperFET? is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provid

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FAIRCHILD

仙童半導體

600V N-Channel MOSFET

Description SuperFET? MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance.This technology is tailored to minimize conduction loss, pr

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FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 73mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導體

MOSFET – N-Channel

Features ? Typical rDS(on) = 66 m at VGS = 10 V, ID = 47 A ? Typical Qg(tot) = 190 nC at VGS = 10 V, ID = 47 A ? UIS Capability ? Qualified to AEC Q101 and PPAP Capable ? This Device is Pb?Free and is RoHS Compliant Applications ? Automotive On Board Charger ? Automotive DC/DC Converter

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ONSEMI

安森美半導體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：372.25 Kbytes 頁數(shù)：2 Pages

ISC

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