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    首頁 >SPA>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    SPA11N65C3

    Cool MOS??Power Transistor

    Cool MOS? Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0) for ta

    文件:816.1 Kbytes 頁數(shù):14 Pages

    INFINEON

    英飛凌

    SPA11N80C3

    isc N-Channel MOSFET Transistor

    ? FEATURES ? New revolutionary high voltage technology ? Ultra low gate charge ? High peak current capability ? Improved transconductance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

    文件:314.46 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    SPA11N80C3

    Cool MOS??Power Transistor

    Cool MOS? Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

    文件:253.78 Kbytes 頁數(shù):12 Pages

    INFINEON

    英飛凌

    SPA-1218

    1960 MHz 1 Watt Power Amp with Active Bias

    Product Description Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and

    文件:208.8 Kbytes 頁數(shù):5 Pages

    STANFORD

    SPA-1218

    1960 MHz 1 Watt Power Amplifier with Active Bias

    Product Description Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and c

    文件:95.08 Kbytes 頁數(shù):5 Pages

    SIRENZA

    SPA12N50C3

    Isc N-Channel MOSFET Transistor

    ? FEATURES ? With TO-220F Package ? Low input capacitance and gate charge ? Low gate input resistance ? Reduced switching and conduction losses ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applica

    文件:267.51 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    SPA12N50C3

    Cool MOS??Power Transistor

    Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

    文件:365.73 Kbytes 頁數(shù):13 Pages

    INFINEON

    英飛凌

    SPA13003

    NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

    NPN Triple Diffused Planar Silicon Transistor Features ? High breakdown voltage. ? High-speed switching. ? Wide ASO. ? Adoption of MBIT process.

    文件:283.62 Kbytes 頁數(shù):4 Pages

    SANYO

    三洋

    SPA-1318

    2150 MHz 1 Watt Power Amplifier with Active Bias

    Product Description Sirenza Microdevicesa€? SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and

    文件:88.33 Kbytes 頁數(shù):5 Pages

    SIRENZA

    SPA-1318

    2150 MHz 1 Watt Power Amplifier with Active Bias

    Product Description Stanford Microdevicesa€? SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable an

    文件:227.92 Kbytes 頁數(shù):6 Pages

    STANFORD

    技術(shù)參數(shù)

    • 線規(guī) - AWG:

      22~26

    • 線規(guī) - mm2:

      0.13~0.33

    • 觸頭材料:

      磷青銅

    • 觸頭鍍層:

    • 認(rèn)證:

      RoHS

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
    INFINEON
    25+
    TO220
    6000
    詢價(jià)
    IOR
    10+
    ZIP-4
    7800
    全新原裝正品,現(xiàn)貨銷售
    詢價(jià)
    NEC
    24+
    66800
    原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源!
    詢價(jià)
    Infineon/英飛凌
    0203+
    TO-220F
    4
    原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
    詢價(jià)
    INFINEON
    17+
    TO-220F
    6200
    100%原裝正品現(xiàn)貨
    詢價(jià)
    QORVO
    2450+
    na
    8850
    只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
    詢價(jià)
    SANYOU/三友
    24+
    DIP
    60000
    詢價(jià)
    INFINEON
    24+
    TO-220F
    5850
    全新原裝現(xiàn)貨
    詢價(jià)
    INFINEON
    24+
    TO-220
    8000
    原廠原裝,價(jià)格優(yōu)勢(shì),歡迎洽談!
    詢價(jià)
    HPSA
    23+
    QFN
    3000
    一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
    詢價(jià)
    更多SPA供應(yīng)商 更新時(shí)間2026-1-19 11:02:00

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