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          首頁(yè) >SPA>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SPA07N60CFD

          CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

          Features ? Intrinsic fast-recovery body diode ? Extremely low reverse recovery charge ? Ultra low gate charge ? Extreme dv /dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications CoolMOS CFD designed for: ? Soft switching PWM Stages ? LCD & CR

          文件:348.3 Kbytes 頁(yè)數(shù):12 Pages

          INFINEON

          英飛凌

          SPA07N60CFD

          Isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-220F package ? Low input capacitance and gate charge ? Low gate input resistance ? Reduced switching and conduction losses ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching application

          文件:260.54 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPA07N65C3

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:299.15 Kbytes 頁(yè)數(shù):14 Pages

          INFINEON

          英飛凌

          SPA07N65C3

          絲印:07N65C3;Package:PG-TO220-3;Cool MOS Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ● PG-TO-220-3: Fully isolated package (2500 VAC; 1 minute) ? Pb-free lead plating; RoHS compliant ? Quali

          文件:396.38 Kbytes 頁(yè)數(shù):15 Pages

          INFINEON

          英飛凌

          SPA07N65C3

          isc N-Channel MOSFET Transistor

          ? FEATURES ? New revolutionary high voltage technology ? Ultra low gate charge ? High peak current capability ? Improved transconductance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

          文件:314.02 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPA08N50C3

          Isc N-Channel MOSFET Transistor

          ? FEATURES ? Drain Current ID= 7.6A@ TC=25℃ ? Drain Source Voltage- : VDSS=500V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching

          文件:270.3 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPA08N50C3

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) ? Pb-free lead plating; RoHS comp

          文件:265.73 Kbytes 頁(yè)數(shù):13 Pages

          INFINEON

          英飛凌

          SPA08N80C3

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:252.67 Kbytes 頁(yè)數(shù):12 Pages

          INFINEON

          英飛凌

          SPA08N80C3

          Isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-220F package ? Low input capacitance and gate charge ? Reduced switching and conduction losses ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

          文件:261.07 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          SPA-1118

          850 MHz 1 Watt Power Amplifier with Active Bias

          Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and c

          文件:109.52 Kbytes 頁(yè)數(shù):5 Pages

          SIRENZA

          技術(shù)參數(shù)

          • 線規(guī) - AWG:

            22~26

          • 線規(guī) - mm2:

            0.13~0.33

          • 觸頭材料:

            磷青銅

          • 觸頭鍍層:

          • 認(rèn)證:

            RoHS

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          IOR
          10+
          ZIP-4
          7800
          全新原裝正品,現(xiàn)貨銷售
          詢價(jià)
          Infineon/英飛凌
          0203+
          TO-220F
          4
          原裝正品現(xiàn)貨,可開(kāi)發(fā)票,假一賠十
          詢價(jià)
          INFINEON
          24+
          TO
          20000
          全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅?。?/div>
          詢價(jià)
          INFINEON
          24+
          SMD
          12000
          原廠/代理渠道價(jià)格優(yōu)勢(shì)
          詢價(jià)
          SANYOU/三友
          24+
          DIP
          60000
          詢價(jià)
          英飛凌
          24+
          TO-3P
          6430
          原裝現(xiàn)貨/歡迎來(lái)電咨詢
          詢價(jià)
          INFINEON/英飛凌
          24+
          TO-220
          10000
          英飛凌代理渠道只做原裝
          詢價(jià)
          INFINEON
          17+
          TO-220F
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          INFINEON
          24+
          TO-220
          8000
          原廠原裝,價(jià)格優(yōu)勢(shì),歡迎洽談!
          詢價(jià)
          inf原裝
          24+
          TO-220F
          30980
          原裝現(xiàn)貨/放心購(gòu)買
          詢價(jià)
          更多SPA供應(yīng)商 更新時(shí)間2026-1-19 11:04:00
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