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          首頁 >SPA>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SPA2045

          Photovoltaic Solar Cell Protection Schottky Diode

          Reverse Voltage - 45 Volts Forward Current - 20 Amperes Features ● Low power loss, high efficiency ● High current capability, low VF ● High surge capacity Applications ● For use in solar cell junction box as a bypass diode

          文件:368.78 Kbytes 頁數(shù):3 Pages

          HY

          虹揚科技

          SPA2045C

          Photovoltaic Solar Cell Protection Schottky Diode

          Reverse Voltage - 45Volts Forward Current - 20.0 Amperes Features ● Low power loss, high efficiency ● High current capability, low VF ● High surge capacity Applications ● For use in solar cell junction box as a bypass diode

          文件:379.1 Kbytes 頁數(shù):3 Pages

          HY

          虹揚科技

          SPA20N60C2

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Worldwide best RDS(on) in TO 220 ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances

          文件:163.38 Kbytes 頁數(shù):14 Pages

          INFINEON

          英飛凌

          SPA20N60C3

          Cool MOS Power Transistor

          Feature ? New revolutionary high voltage technology ? Worldwide best RDS(on) in TO 220 ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:314.6 Kbytes 頁數(shù):14 Pages

          INFINEON

          英飛凌

          SPA20N60C3

          isc N-Channel MOSFET Transistor

          ? FEATURES ? New revolutionary high voltage technology ? Ultra low gate charge ? High peak current capability ? Improved transconductance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

          文件:313.83 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          SPA20N60CFD

          Isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-220F package ? Low input capacitance and gate charge ? Low gate input resistance ? Reduced switching and conduction losses ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching application

          文件:260.13 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          SPA20N60CFD

          CoolMOS Power Transistor

          Features ? New revolutionary high voltage technology ? Intrinsic fast-recovery body diode ? Extremely low reverse recovery charge ? Ultra low gate charge ? Extreme dv /dt rated ? High peak current capability ? Periodic avalanche rated ? Qualified for industrial grade applications according

          文件:293.38 Kbytes 頁數(shù):12 Pages

          INFINEON

          英飛凌

          SPA20N65C3

          絲?。?a target="_blank" title="Marking" href="/20n65c3/marking.html">20N65C3;Package:TO-220FP;Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Worldwide best RDS(on) in TO 220 ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0

          文件:784.74 Kbytes 頁數(shù):14 Pages

          INFINEON

          英飛凌

          SPA-2118

          850 MHz 1 Watt Power Amplifier with Active Bias

          Product Description Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and

          文件:215.1 Kbytes 頁數(shù):6 Pages

          SIRENZA

          SPA21N50C3

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Worldwide best RDS(on) in TO 220 ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:341.43 Kbytes 頁數(shù):13 Pages

          INFINEON

          英飛凌

          技術參數(shù)

          • 線規(guī) - AWG:

            22~26

          • 線規(guī) - mm2:

            0.13~0.33

          • 觸頭材料:

            磷青銅

          • 觸頭鍍層:

          • 認證:

            RoHS

          供應商型號品牌批號封裝庫存備注價格
          INFINEON
          17+
          TO-220F
          6200
          100%原裝正品現(xiàn)貨
          詢價
          INFINEON
          24+
          TO-220F
          5850
          全新原裝現(xiàn)貨
          詢價
          IOR
          10+
          ZIP-4
          7800
          全新原裝正品,現(xiàn)貨銷售
          詢價
          ADI
          QQ咨詢
          模塊
          63
          全新原裝 研究所指定供貨商
          詢價
          HPSA
          23+
          QFN
          3000
          一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
          詢價
          INFINEON/英飛凌
          2403+
          TO220F
          6489
          原裝現(xiàn)貨熱賣!十年芯路!堅持!
          詢價
          Infineon/英飛凌
          0203+
          TO-220F
          4
          原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
          詢價
          ECT
          2301+
          探針
          10000
          全新、原裝
          詢價
          INFINEON
          25+
          TO220
          6000
          詢價
          SANYOU/三友
          24+
          DIP
          60000
          詢價
          更多SPA供應商 更新時間2026-1-19 16:01:00
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