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          首頁 >SPA>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SPA-1118Z

          850 MHz 1 Watt Power Amplifier with Active Bias

          Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and c

          文件:109.52 Kbytes 頁數(shù):5 Pages

          SIRENZA

          SPA11N60C2

          絲?。?a target="_blank" title="Marking" href="/11n60c2/marking.html">11N60C2;Package:P-TO220-3-31;Cool MOS??Power Transistor

          Feature 1. New revolutionary high voltage technology 2. Ultra low gate charge 3. Periodic avalanche rated 4. Extreme dv/dt rated 5. Ultra low effective capacitances

          文件:160.17 Kbytes 頁數(shù):14 Pages

          INFINEON

          英飛凌

          SPA11N60C3

          絲印:11N60C3;Package:PG-TO220FP;Cool MOS? Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

          文件:683.7 Kbytes 頁數(shù):15 Pages

          INFINEON

          英飛凌

          SPA11N60C3

          Cool MOS??Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

          文件:352.75 Kbytes 頁數(shù):14 Pages

          INFINEON

          英飛凌

          SPA11N60C3

          isc N-Channel MOSFET Transistor

          ? FEATURES ? New revolutionary high voltage technology ? Ultra low gate charge ? High peak current capability ? Improved transconductance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

          文件:314.85 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          SPA11N60C3

          N-Channel 650V (D-S)Power MOSFET

          FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS)

          文件:1.07096 Mbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          SPA11N60C3E8185

          N-Channel MOSFET Transistor

          ? DESCRIPTION ? Ultra low gate charge ? High peak current capability ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.38? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device perfor

          文件:339.4 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          SPA11N60C3E8185

          絲?。?a target="_blank" title="Marking" href="/11n60c3/marking.html">11N60C3;Package:PG-TO220;Cool MOS? Power Transistor

          Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

          文件:683.7 Kbytes 頁數(shù):15 Pages

          INFINEON

          英飛凌

          SPA11N60CFD

          CoolMOS Power Transistor

          Features ? New revolutionary high voltage technology ? Intrinsic fast-recovery body diode ? Extremely low reverse recovery charge ? Ultra low gate charge ? Extreme dv /dt rated ? High peak current capability ? Periodic avalanche rated ? Qualified according to JEDEC0) for target application

          文件:262.52 Kbytes 頁數(shù):12 Pages

          INFINEON

          英飛凌

          SPA11N60CFD

          Isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-220F package ? Low input capacitance and gate charge ? Low gate input resistance ? Reduced switching and conduction losses ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applica

          文件:260.899 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • 線規(guī) - AWG:

            22~26

          • 線規(guī) - mm2:

            0.13~0.33

          • 觸頭材料:

            磷青銅

          • 觸頭鍍層:

          • 認(rèn)證:

            RoHS

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          IOR
          10+
          ZIP-4
          7800
          全新原裝正品,現(xiàn)貨銷售
          詢價(jià)
          Infineon/英飛凌
          0203+
          TO-220F
          4
          原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
          詢價(jià)
          INFINEON
          17+
          TO-220F
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          SANYOU/三友
          24+
          DIP
          60000
          詢價(jià)
          ADI
          QQ咨詢
          模塊
          63
          全新原裝 研究所指定供貨商
          詢價(jià)
          INFINEON
          24+
          TO-220F
          5850
          全新原裝現(xiàn)貨
          詢價(jià)
          INFINEON
          24+
          TO-220
          8000
          原廠原裝,價(jià)格優(yōu)勢,歡迎洽談!
          詢價(jià)
          INFINEON/英飛凌
          2403+
          TO220F
          6489
          原裝現(xiàn)貨熱賣!十年芯路!堅(jiān)持!
          詢價(jià)
          HPSA
          23+
          QFN
          3000
          一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
          詢價(jià)
          MOT
          26+
          QFP
          12000
          原裝,正品
          詢價(jià)
          更多SPA供應(yīng)商 更新時(shí)間2026-1-19 11:04:00
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