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          首頁 >DS06>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SDS065J020C3

          絲?。?a target="_blank" title="Marking" href="/ds065020c3/marking.html">DS065020C3;Package:TO-220-2L;3 rd Generation 650 V/ 20A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

          文件:1.14607 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS065J020D3

          絲?。?a target="_blank" title="Marking" href="/ds065020d3/marking.html">DS065020D3;Package:TO-252-2L;3 rd Generation 650 V/2 0 A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed swit ching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

          文件:1.10432 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS065J020G3

          絲?。?a target="_blank" title="Marking" href="/ds065020g3/marking.html">DS065020G3;Package:TO-247-3L;3 rd Generation 65 0V/ 20 A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

          文件:1.15557 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS065J020H3

          絲?。?a target="_blank" title="Marking" href="/ds065020h3/marking.html">DS065020H3;Package:TO-247-2L;3 rd Generation 65 0V/20A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) No reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

          文件:1.14042 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS065J020W3

          絲?。?a target="_blank" title="Marking" href="/ds065020w3/marking.html">DS065020W3;Package:TO-3PF-3L;3rd Generation 650V20A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) Insulated package TO-3 PF an insulation voltage of 2.5kV No reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction tempera

          文件:595.58 Kbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS065J030G3

          絲?。?a target="_blank" title="Marking" href="/ds065030g3/marking.html">DS065030G3;Package:TO-247-3L;3 rd Generation 65 0V/ 30 A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

          文件:1.15748 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS065J040G3

          絲?。?a target="_blank" title="Marking" href="/ds065040g3/marking.html">DS065040G3;Package:TO-247-3L;3 rd Generation 65 0V/ 40 A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

          文件:1.15913 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS065J050H3

          絲?。?a target="_blank" title="Marking" href="/ds065050h3/marking.html">DS065050H3;Package:TO-247-2L;3 rd Generation 65 0V/ 50A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant

          文件:1.19191 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          DS0602

          DAICO Switches SPST, SP2T

          DAICO

          DS0612

          DAICO Switches SPST, SP2T

          DAICO

          詳細參數(shù)

          • 型號:

            DS06

          • 制造商:

            DAICO

          • 制造商全稱:

            DAICO

          • 功能描述:

            PIN Diode SP2T

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          加我QQ或微信咨詢更多詳細信息,
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          更多DS06供應商 更新時間2026-1-19 10:16:00
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