| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/ds065010c3/marking.html">DS065010C3;Package:TO-220-2L;3 rd Generation 650 V/ 10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件:1.14206 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065010d3/marking.html">DS065010D3;Package:TO-252-2L;3 rd Generation 650 V/ 1 0 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件:1.15404 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065010e3/marking.html">DS065010E3;Package:TO-263-2L;3 rd Generation 65 0V/ 10 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件:1.07091 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065010n3/marking.html">DS065010N3;Package:TO-220N-2L;650V/10A SiC Schottky Barrier Diode Zero Reverse Recovery Current Ceramic Package Provides 2.5kV Isolation Positive temperature coefficient Temperature independent performance High speed switching Low switch ing loss Low heat dissipation requirements 文件:924.39 Kbytes 頁數:4 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065010s3/marking.html">DS065010S3;Package:DFN;3 rd Generation 65 0V/ 10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件:1.05596 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065012c3/marking.html">DS065012C3;Package:TO-220-2L;3 rd Generation 650 V/ 12A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件:1.13794 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065012s3/marking.html">DS065012S3;Package:DFN8X84L;3rd Generation 65 0V/ 12A SiC Schottky Barrier Diode Revolutionary semiconductor material Si licon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件:995.95 Kbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲印:DS065016C3;Package:TO-220-2L;3 rd Generation 650 V/ 16A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件:1.13687 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065016g3/marking.html">DS065016G3;Package:TO-247-3L;3 rd Generation 65 0V/ 16 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements unction temperature range from 55 to 175 RoHS compliant 文件:1.16322 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN | ||
絲印:DS065016H3;Package:TO-247-2L;3 rd Generation 650 V/ 16 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件:1.13472 Mbytes 頁數:9 Pages | SANAN 三安光電 | SANAN |
詳細參數
- 型號:
DS06
- 制造商:
DAICO
- 制造商全稱:
DAICO
- 功能描述:
PIN Diode SP2T
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Advantech |
22+ |
NA |
6878 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
SANANIC三安集成 |
2540+ |
8595 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | |||
MIYAMA/三山 |
23+ |
20000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
24+ |
N/A |
67000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
USAKRO(美韓) |
23+ |
插件 |
584 |
原裝現貨/專做開關15年 |
詢價 | ||
SWITRONIC |
13+ |
2823 |
原裝分銷 |
詢價 | |||
XKB CONNECTIVITY(中國星坤) |
24+ |
con |
10000 |
查現貨到京北通宇商城 |
詢價 | ||
韓國韓榮 |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨 |
詢價 | ||
HRO韓榮 |
2407+ |
DIP-6 |
30098 |
全新原裝!倉庫現貨,大膽開價! |
詢價 | ||
N/A |
16+ |
NA |
8800 |
原裝現貨,貨真價優(yōu) |
詢價 |
相關規(guī)格書
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- DS08TFHWC-17000-D
- DS08TFHXK-17000-D
- DS09
- DS0900502RP

