| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：DS065016G3；Package：TO-247-3L；3 rd Generation 65 0V/ 16 A SiC Schottky Barrier Diode Features ? AEC Q 101 qualified ? Revolutionary semiconductor material Silicon Carbide (SiC) ? N o reverse recovery ? High speed switching performance ? Temperature independent s witching behavior ? System cost / size savings due to reduced cooling requirements ? J unction temperature range 文件：1.17064 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065020c3/marking.html">DS065020C3；Package：TO-220-2L；3 rd Generation 650V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp 文件：1.15573 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065020e3/marking.html">DS065020E3；Package：TO-263-2L；3 rd Generation 650V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp 文件：1.08429 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065020g3/marking.html">DS065020G3；Package：TO-247-3L；3 rd Generation 65 0V/ 20 A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse r ecovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com 文件：1.03273 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065020h3/marking.html">DS065020H3；Package：TO-247-2L；3 rd Generation 650V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp 文件：1.14778 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065040g3/marking.html">DS065040G3；Package：TO-247-3L；3 rd Generation 65 0V/ 4 0 A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent s witching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com 文件：1.16661 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065002d3/marking.html">DS065002D3；Package：TO-252-2L；3 rd Generation 650 V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.07542 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065004c3/marking.html">DS065004C3；Package：TO-220-2L；3 rd Generation 650 V/ 4 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.12913 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲印：DS065004C4；Package：TO-220-2L；4 th Generation 650V/ 4 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed s witching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.03745 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065004d3/marking.html">DS065004D3；Package：TO-252-2L；3 rd Generation 650 V/ 4 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.08732 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN |
詳細(xì)參數(shù)
- 型號：
DS06
- 制造商：
DAICO
- 制造商全稱：
DAICO
- 功能描述：
PIN Diode SP2T
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Advantech |
22+ |
NA |
6878 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
SANANIC三安集成 |
2540+ |
8595 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | |||
MIYAMA/三山 |
23+ |
20000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
24+ |
N/A |
67000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
USAKRO(美韓) |
23+ |
插件 |
584 |
原裝現(xiàn)貨/專做開關(guān)15年 |
詢價 | ||
SWITRONIC |
13+ |
2823 |
原裝分銷 |
詢價 | |||
XKB CONNECTIVITY(中國星坤) |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
韓國韓榮 |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
HRO韓榮 |
2407+ |
DIP-6 |
30098 |
全新原裝!倉庫現(xiàn)貨,大膽開價! |
詢價 | ||
N/A |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- DS0644
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- DS0742
- DS0751SA49760MHZ
- DS0751SV-20.000M
- DS0751SV-33.333MHZ
- DS075H1
- DS077_08
- DS07-7P
- DS07-7P-2044
- DS07-7S-2044
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- DS08MB200TSQ/NOPB
- DS08MB200TSQX/NOPB
- DS08TFHWC-17000-D
- DS08TFHXK-17000-D
- DS09
- DS0900502RP
