| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/ds065004d4/marking.html">DS065004D4；Package：TO-252-2L；4 th Generation 650 V/ 4 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.08022 Mbytes 頁(yè)數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065006c3/marking.html">DS065006C3；Package：TO-220-2L；3 rd Generation 650 V/ 6 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.09746 Mbytes 頁(yè)數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲印：DS065006D3；Package：TO-252-2L；3 rd Generation 650 V/ 6 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.11029 Mbytes 頁(yè)數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065006e3/marking.html">DS065006E3；Package：TO-263-2L；3 rd Generation 65 0V/ 6 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse re covery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.02601 Mbytes 頁(yè)數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065006s3/marking.html">DS065006S3；Package：DFN884L；3 rd Generation 65 0V/ 6 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide ( N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.01541 Mbytes 頁(yè)數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲印：DS065008C3；Package：TO-220-2L；3 rd Generation 650 V/ 8A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching perfor mance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.15131 Mbytes 頁(yè)數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065008d3/marking.html">DS065008D3；Package：TO-252-2L；650V/8A SiC Schottky Barrier Diode Zero Reverse Recovery Current Positive temperature coefficient Temperature independent performance High speed switching Low switching loss Low hea t dissipation req uirements Application ? Switching power supply ? Power factor correction ? Motor drive traction ? Charging pile 文件：413.28 Kbytes 頁(yè)數(shù)：4 Pages | SANAN 三安光電 | SANAN | ||
絲印：DS065008D4；Package：TO-252-2L；4 th Generation 650 V/ 8 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.09546 Mbytes 頁(yè)數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065008n3/marking.html">DS065008N3；Package：TO-220N-2L；650V/8A SiC Schottky Barrier Diode Zero Reverse Recovery Current Ceramic Package Provides 2.5kV Isolation Positive temperature coefficient Temperature independent performance High speed switching Low switc hing loss Low heat dissipation requirements 文件：936.72 Kbytes 頁(yè)數(shù)：4 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds065008s3/marking.html">DS065008S3；Package：DFN；3 rd Generation 65 0V/ 8A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS compliant 文件：1.06561 Mbytes 頁(yè)數(shù)：9 Pages | SANAN 三安光電 | SANAN |
詳細(xì)參數(shù)
- 型號(hào)：
DS06
- 制造商：
DAICO
- 制造商全稱：
DAICO
- 功能描述：
PIN Diode SP2T
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Advantech |
22+ |
NA |
6878 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
SANANIC三安集成 |
2540+ |
8595 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | |||
MIYAMA/三山 |
23+ |
20000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | |||
24+ |
N/A |
67000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
USAKRO(美韓) |
23+ |
插件 |
584 |
原裝現(xiàn)貨/專做開(kāi)關(guān)15年 |
詢價(jià) | ||
SWITRONIC |
13+ |
2823 |
原裝分銷 |
詢價(jià) | |||
XKB CONNECTIVITY(中國(guó)星坤) |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
韓國(guó)韓榮 |
2447 |
SMD |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
HRO韓榮 |
2407+ |
DIP-6 |
30098 |
全新原裝!倉(cāng)庫(kù)現(xiàn)貨,大膽開(kāi)價(jià)! |
詢價(jià) | ||
N/A |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) |
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