“Click” Type Torque Sensing Wrenches Interchangeable Head “A” Size Series

■ Drive Sizes: 1/4 through 3/4 ■ Accept variety of heads to suit specific application requirements. ■ Common center principal allows simple exchange or replacement of heads without need for recalibration. ■ Choice of micrometer adjustable or single setting (preset) models. ■ Accuracy is ±4%

文件：396.04 Kbytes 頁數(shù)：2 Pages

UTICA

7-13GHz Low Noise Amplifier

Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form or in an hermetic leadless cera

文件：135.46 Kbytes 頁數(shù)：10 Pages

UMS

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ? Broad band performance 10-16GHz ? 2.

文件：128 Kbytes 頁數(shù)：8 Pages

UMS

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ? Broad band performance 10-16GHz ? 2.

文件：128 Kbytes 頁數(shù)：8 Pages

UMS

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ? Broad band performance 10-16GHz ? 2.

文件：128 Kbytes 頁數(shù)：8 Pages

UMS

10-16GHz Low Noise Amplifier

Description The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. Main Features ■ Broadband performance 10-16GHz ■ 2.5dB noise figure, 10-16GHz (BD) ■

文件：299.24 Kbytes 頁數(shù)：12 Pages

UMS

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

文件：182.32 Kbytes 頁數(shù)：8 Pages

UMS

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

文件：182.32 Kbytes 頁數(shù)：8 Pages

UMS

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

文件：182.32 Kbytes 頁數(shù)：8 Pages

UMS

18-31GHz Low Noise Amplifier

Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ? Broad band performance

文件：167 Kbytes 頁數(shù)：8 Pages

UMS