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          首頁(yè) >CHA>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          CHA2190

          20-30GHz Low Noise Amplifier

          Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main

          文件:163.22 Kbytes 頁(yè)數(shù):9 Pages

          UMS

          CHA2190-99F/00

          20-30GHz Low Noise Amplifier

          Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main

          文件:163.22 Kbytes 頁(yè)數(shù):9 Pages

          UMS

          CHA2190-99FSLASH00

          20-30GHz Low Noise Amplifier

          Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main

          文件:163.22 Kbytes 頁(yè)數(shù):9 Pages

          UMS

          CHA2192

          24-26.5GHz Low Noise Amplifier

          Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HE

          文件:92.63 Kbytes 頁(yè)數(shù):6 Pages

          UMS

          CHA2192-99F/00

          24-26.5GHz Low Noise Amplifier

          Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HE

          文件:92.63 Kbytes 頁(yè)數(shù):6 Pages

          UMS

          CHA2192-99FSLASH00

          24-26.5GHz Low Noise Amplifier

          Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HE

          文件:92.63 Kbytes 頁(yè)數(shù):6 Pages

          UMS

          CHA2193

          20-30GHz Low Noise Amplifier

          Description The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a

          文件:112.15 Kbytes 頁(yè)數(shù):10 Pages

          UMS

          CHA2194

          36-44GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air br

          文件:195.11 Kbytes 頁(yè)數(shù):10 Pages

          UMS

          CHA2194-99F/00

          36-44GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air br

          文件:195.11 Kbytes 頁(yè)數(shù):10 Pages

          UMS

          CHA2194-99FSLASH00

          36-44GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air br

          文件:195.11 Kbytes 頁(yè)數(shù):10 Pages

          UMS

          技術(shù)參數(shù)

          • 正向電壓:

            21V

          • 工作電流:

            300mA

          • 發(fā)光角度:

            114°

          • 光通量(25℃):

            449lm

          • 色溫:

            3000K

          • CRI顯色指數(shù):

            80

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          17+
          6200
          100%原裝正品現(xiàn)貨
          詢(xún)價(jià)
          ZILOG
          00/01+
          SMD18
          273
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢(xún)價(jià)
          MIT
          23+
          QFP/208
          7000
          絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
          詢(xún)價(jià)
          CHENMKO
          13+
          SMA
          5425
          原裝分銷(xiāo)
          詢(xún)價(jià)
          NISSEI
          2016+
          SMD
          9000
          只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
          詢(xún)價(jià)
          UMS
          23+
          裸片
          6500
          原裝正品,假一罰十
          詢(xún)價(jià)
          UMS
          25+
          QFN
          1964
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢(xún)價(jià)
          24+
          SOP
          6980
          原裝現(xiàn)貨,可開(kāi)13%稅票
          詢(xún)價(jià)
          24+
          29000
          詢(xún)價(jià)
          NISSEI
          24+
          0805
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢(xún)價(jià)
          更多CHA供應(yīng)商 更新時(shí)間2026-1-20 8:31:00
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