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          首頁(yè) >CHA>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          CHA2069-99F/00

          18-31GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ? Broad band performance

          文件:167 Kbytes 頁(yè)數(shù):8 Pages

          UMS

          CHA2069-99FSLASH00

          18-31GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ? Broad band performance

          文件:167 Kbytes 頁(yè)數(shù):8 Pages

          UMS

          CHA2069-QDG

          18-30GHz Low Noise Amplifier

          Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multipoint, VSAT) to ISM and military markets. Main Features ■ Broadband performance 18-30GHz ■ 3dB noise figure ■ 20dB

          文件:439.47 Kbytes 頁(yè)數(shù):18 Pages

          UMS

          CHA2069RAF

          18-31GHz Low Noise Amplifier

          Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai

          文件:171.64 Kbytes 頁(yè)數(shù):7 Pages

          UMS

          CHA2069RAF/24

          18-31GHz Low Noise Amplifier

          Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai

          文件:171.64 Kbytes 頁(yè)數(shù):7 Pages

          UMS

          CHA2069RAFSLASH24

          18-31GHz Low Noise Amplifier

          Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai

          文件:171.64 Kbytes 頁(yè)數(shù):7 Pages

          UMS

          CHA2090

          17-24GHz Low Noise Amplifier

          Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai

          文件:130.83 Kbytes 頁(yè)數(shù):8 Pages

          UMS

          CHA2090-99F/00

          17-24GHz Low Noise Amplifier

          Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai

          文件:130.83 Kbytes 頁(yè)數(shù):8 Pages

          UMS

          CHA2090-99FSLASH00

          17-24GHz Low Noise Amplifier

          Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai

          文件:130.83 Kbytes 頁(yè)數(shù):8 Pages

          UMS

          CHA2091

          36-40GHz Low Noise Amplifier

          Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ Broad

          文件:115.85 Kbytes 頁(yè)數(shù):8 Pages

          UMS

          技術(shù)參數(shù)

          • 正向電壓:

            21V

          • 工作電流:

            300mA

          • 發(fā)光角度:

            114°

          • 光通量(25℃):

            449lm

          • 色溫:

            3000K

          • CRI顯色指數(shù):

            80

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          17+
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          ZILOG
          00/01+
          SMD18
          273
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          MIT
          23+
          QFP/208
          7000
          絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
          詢價(jià)
          CHENMKO
          13+
          SMA
          5425
          原裝分銷
          詢價(jià)
          NISSEI
          2016+
          SMD
          9000
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價(jià)
          UMS
          23+
          裸片
          6500
          原裝正品,假一罰十
          詢價(jià)
          UMS
          25+
          QFN
          1964
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          24+
          SOP
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價(jià)
          24+
          29000
          詢價(jià)
          NISSEI
          24+
          0805
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價(jià)
          更多CHA供應(yīng)商 更新時(shí)間2026-1-20 16:00:00
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