10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

文件：182.32 Kbytes 頁數(shù)：8 Pages

UMS

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

文件：182.32 Kbytes 頁數(shù)：8 Pages

UMS

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

文件：182.32 Kbytes 頁數(shù)：8 Pages

UMS

10-16GHz Self biased Low Noise Amplifier

Description\nThe monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier.\nThe MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.\nIt is s ■ Broad band performance: 10-16GHz\n■ Gain = 15dB (typical)\n■ Noise Figure 2.0dB (typical)\n■ Output power (P-1dB) 13dBm (typical)\n■ Return loss < -6dB\n■ SMD leadless package\n■ Dimensions: 5.08 x 5.08 x 0.97 mm3?;

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