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          首頁(yè) >CEB51A3>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          CEB51A3

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 48A, RDS(ON) =16.5m? @VGS = 10V. RDS(ON) =28m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:103.92 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEB51A3

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES\n■ 30V, 48A, RDS(ON) =16.5m? @VGS = 10V.\n?????????????? ? RDS(ON) =28m? @VGS = 4.5V.\n■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ Lead free product is acquired.\n■ TO-220 & TO-263 package. ■ 30V, 48A, RDS(ON) =16.5m? @VGS = 10V.\n?????????????? ? RDS(ON) =28m? @VGS = 4.5V.\n■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ Lead free product is acquired.\n■ TO-220 & TO-263 package.?;

          CET

          華瑞

          CED51A3

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 35A, RDS(ON) = 14m?(typ) @VGS = 10V. RDS(ON) = 21m?(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:143.62 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEP51A3

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 48A, RDS(ON) =16.5m? @VGS = 10V. RDS(ON) =28m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:103.92 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEU51A3

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 35A, RDS(ON) = 14m?(typ) @VGS = 10V. RDS(ON) = 21m?(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:143.62 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          詳細(xì)參數(shù)

          • 型號(hào):

            CEB51A3

          • 制造商:

            CET

          • 制造商全稱:

            Chino-Excel Technology

          • 功能描述:

            N-Channel Enhancement Mode Field Effect Transistor

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          SR
          23+
          T0-263
          5000
          原裝正品,假一罰十
          詢價(jià)
          CET
          25+
          TO-263
          90000
          進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
          詢價(jià)
          CET
          23+
          TO-263
          7300
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          CET
          23+24
          TO-263
          38754
          原裝正品渠道商,提供BOM一站式配單服務(wù)
          詢價(jià)
          CET
          24+
          5000
          詢價(jià)
          CET/華瑞
          23+
          TO-263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          C
          TO-263
          22+
          6000
          十年配單,只做原裝
          詢價(jià)
          CET
          25+
          TO-263
          1538
          原裝正品,假一罰十!
          詢價(jià)
          VIA
          24+
          BGA276
          6618
          公司現(xiàn)貨庫(kù)存,支持實(shí)單
          詢價(jià)
          CET
          26+
          原廠原封裝
          86720
          全新原裝正品價(jià)格最實(shí)惠 承諾假一賠百
          詢價(jià)
          更多CEB51A3供應(yīng)商 更新時(shí)間2026-1-18 15:35:00
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