| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
CEB6056 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. 文件：401.17 Kbytes 頁數：4 Pages | CET 華瑞 | CET | |
CEB6056 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant. 文件：473.04 Kbytes 頁數：4 Pages | CET-MOS 華瑞 | CET-MOS | |
CEB6056 | N Channel MOSFET | CET 華瑞 | CET | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 9.0mW @VGS = 4.5V. 文件：653.29 Kbytes 頁數：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N Channel MOSFET | CET 華瑞 | CET |
技術參數
- BVDSS(V)：
60
- Rds(on)mΩ@10V：
6.2
- ID(A)：
100
- Qg(nC)@10V(typ)：
77
- RθJC(℃/W)：
1.5
- Pd(W)：
100
- Configuration：
Single
- Polarity：
N
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
CET |
1932+ |
TO-263 |
512 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
CET |
23+ |
TO-263 |
547 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
VB |
25+ |
T0-263 |
1040 |
原裝正品,假一罰十! |
詢價 | ||
VIATELECOM |
24+ |
BGA |
6618 |
公司現貨庫存,支持實單 |
詢價 | ||
CET/華瑞 |
24+ |
TO-263 |
60000 |
詢價 | |||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
國產 |
詢價 | ||
CET/華瑞 |
2511 |
TO-263 |
360000 |
電子元器件采購降本30%!原廠直采,砍掉中間差價 |
詢價 | ||
VBSEMI/臺灣微碧 |
23+ |
T0-263 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
CET |
24+ |
TO-263 |
1335 |
詢價 |
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