<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
        1. <del id="5lvfi"></del>

          首頁 >CEB830G>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CEB830G

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

          文件:402.2 Kbytes 頁數:4 Pages

          CET

          華瑞

          CEB830G

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:648.72 Kbytes 頁數:4 Pages

          CET-MOS

          華瑞

          CEB830G

          N Channel MOSFET

          CET

          華瑞

          CED830A

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 500V, 4.1A, RDS(ON) = 1.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

          文件:364.89 Kbytes 頁數:4 Pages

          CET-MOS

          華瑞

          CED830G

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:397.5 Kbytes 頁數:4 Pages

          CET

          華瑞

          CED830G

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 500V, 4.5A, RDS(ON) = 1.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

          文件:557.38 Kbytes 頁數:4 Pages

          CET-MOS

          華瑞

          技術參數

          • BVDSS(V):

            500

          • Rds(on)mΩ@10V:

            1500

          • ID(A):

            5

          • Qg(nC)@10V(typ):

            13

          • RθJC(℃/W):

            1.5

          • Pd(W):

            83

          • Configuration:

            Single

          • Polarity:

            N

          供應商型號品牌批號封裝庫存備注價格
          CET/華瑞
          2511
          TO-263
          360000
          電子元器件采購降本30%!原廠直采,砍掉中間差價
          詢價
          CET
          25+
          TO-263
          12300
          獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
          詢價
          CET
          23+
          TO263
          7000
          絕對全新原裝!100%保質量特價!請放心訂購!
          詢價
          CET
          24+
          TO263
          571
          詢價
          SR
          23+
          T0-263
          5000
          原裝正品,假一罰十
          詢價
          SOT263
          23+
          NA
          15659
          振宏微專業(yè)只做正品,假一罰百!
          詢價
          CET
          25+
          TO-263
          90000
          進口原裝現貨假一罰十價格合理
          詢價
          CET/華瑞
          23+
          TO-263
          50000
          全新原裝正品現貨,支持訂貨
          詢價
          CET/華瑞
          2022+
          TO-263
          540
          原廠代理 終端免費提供樣品
          詢價
          CET/華瑞
          22+
          TO-263
          100000
          代理渠道/只做原裝/可含稅
          詢價
          更多CEB830G供應商 更新時間2026-1-18 12:00:00
            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                1. <del id="5lvfi"></del>
                  一级A一级闪射免费播放 | 中国妓女一级A片 | 字幕一区二区久久人妻网站 | 免费18禁网站 | 亚洲无码高清电影 |