N-Channel Enhancement Mode Field Effect Transistor

FEATURES ? 60 V, 15 A, RDS(ON) = 85mΩ @VGS = 10 V. ? Super high dense cell design for extremely low RDS(ON) ? High power and current handling capability. ? TO-220 & TO-263 package.

文件：524.79 Kbytes 頁數(shù)：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n? 60 V, 15 A, RDS(ON) = 85mΩ @VGS = 10 V.\n? Super high dense cell design for extremely low RDS(ON)\n? High power and current handling capability.\n? TO-220 & TO-263 package. ? 60 V, 15 A, RDS(ON) = 85mΩ @VGS = 10 V.\n? Super high dense cell design for extremely low RDS(ON)\n? High power and current handling capability.\n? TO-220 & TO-263 package.;

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 90m? @VGS = 10V. RDS(ON) = 100m? @VGS = 5.0V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：505.86 Kbytes 頁數(shù)：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：121.95 Kbytes 頁數(shù)：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 15A, RDS(ON) = 85mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：454.51 Kbytes 頁數(shù)：4 Pages

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