N-Channel Enhancement Mode Field Effect Transistor

FEATURES ? 55V, 15A, RDS(ON) = 80 mΩ @VGS = 10 V. RDS(ON) = 85 mΩ @VGS = 5 V. ? Super high dense cell design for extremely low RDS(ON). ? High power and current handling capability. ? TO-220 & TO-263 package.

文件：504.08 Kbytes 頁數(shù)：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n? 55V, 15A, RDS(ON) = 80 mΩ? @VGS = 10 V.??\n???????????????RDS(ON) = 85 mΩ? @VGS =?5 V.\n? Super high dense cell design for extremely low RDS(ON).\n? High power and current handling capability.\n? TO-220 & TO-263 package. ? 55V, 15A, RDS(ON) = 80 mΩ? @VGS = 10 V.??\n???????????????RDS(ON) = 85 mΩ? @VGS =?5 V.\n? Super high dense cell design for extremely low RDS(ON).\n? High power and current handling capability.\n? TO-220 & TO-263 package.;

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華瑞

N-Channel Enhancement Mode Field Transistor

FEATURES ? 55V, 15A, RDS(ON) = 85 mΩ @VGS = 10 V. ? Super high dense cell design for extremely low RDS(ON). ? High power and current handling capability. ? TO-220 & TO-263 package.

文件：499.92 Kbytes 頁數(shù)：5 Pages

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華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ? 55V, 15A, RDS(ON) = 80 mΩ @VGS = 10 V. RDS(ON) = 85 mΩ @VGS = 5 V. ? Super high dense cell design for extremely low RDS(ON). ? High power and current handling capability. ? TO-220 & TO-263 package.

文件：504.08 Kbytes 頁數(shù)：5 Pages

CET

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The highly absorbent precision cleaning swab with a wide variety of head sizes and shapes

文件：109.95 Kbytes 頁數(shù)：3 Pages

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