絲?。?a target="_blank" title="Marking" href="/c3m0350120j/marking.html">C3M0350120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features ? 3rd generation SiC MOSFET technology ? Low impedance package with driver source pin ? 7mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr

文件：916.58 Kbytes 頁數(shù)：10 Pages

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絲?。?a target="_blank" title="Marking" href="/c3m0900170d/marking.html">C3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? 12V...18V / 0V VGS compatible with most flyback controllers ? Ultra-low drain-gate capacitance ? Qualified to operate under high humidity and high temperature environmental conditions ? Ha

文件：4.69333 Mbytes 頁數(shù)：13 Pages

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1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? 12V..18V / 0V VGS compatible with most flyback controllers ? Ultra-low drain-gate capacitance ? Qualified to operate under high humidity and high temperature environmental conditions ? Hal

文件：1.10312 Mbytes 頁數(shù)：13 Pages

WOLFSPEED

絲?。?a target="_blank" title="Marking" href="/c3m0900170j/marking.html">C3M0900170J；Package：TO-263-7L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? 12V..18V / 0V VGS compatible with most flyback controllers ? Ultra-low drain-gate capacitance ? Qualified to operate under high humidity and high temperature environmental conditions ? Hal

文件：1.10312 Mbytes 頁數(shù)：13 Pages

WOLFSPEED

絲?。?a target="_blank" title="Marking" href="/c3m0900170m/marking.html">C3M0900170M；Package：TO-3PF3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features ? Fully isolated package for simplified assembly ? High-speed switching with low capacitances ? High blocking voltage with low RDS(on) ? 12V..18V / 0V VGS compatible with most flyback controllers ? Ultra-low drain-gate capacitance ? Halogen free, RoHS compliant Typical Application

文件：882.94 Kbytes 頁數(shù)：11 Pages

WOLFSPEED

絲?。?a target="_blank" title="Marking" href="/c3m0015065d/marking.html">C3M0015065D；Package：TO-243-3；Silicon Carbide Power MOSFET

文件：1.26978 Mbytes 頁數(shù)：11 Pages

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絲?。?a target="_blank" title="Marking" href="/c3m0015065k/marking.html">C3M0015065K；Package：TO-247-3；Silicon Carbide Power MOSFET

文件：1.26893 Mbytes 頁數(shù)：11 Pages

CREE

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絲?。?a target="_blank" title="Marking" href="/c3m0016120d/marking.html">C3M0016120D；Package：TO247-3；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：933.85 Kbytes 頁數(shù)：11 Pages

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絲?。?a target="_blank" title="Marking" href="/c3m0016120k/marking.html">C3M0016120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.06295 Mbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/c3m0021120d/marking.html">C3M0021120D；Package：TO247-3；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：807.28 Kbytes 頁數(shù)：10 Pages

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