| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/c3m0075120j2/marking.html">C3M0075120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? Larger drain tab for better thermal performance ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery ( 文件：1.13451 Mbytes 頁數(shù)：13 Pages | WOLFSPEED | WOLFSPEED | ||
SiC N-Channel MOSFET FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 75mΩ（TYP.）@VGS=18V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives 文件：374.79 Kbytes 頁數(shù)：4 Pages | ISC 無錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/c3m0075120k/marking.html">C3M0075120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? 8mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery 文件：934.32 Kbytes 頁數(shù)：11 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0075120k1/marking.html">C3M0075120K1；Package：TO-247-4LLP；Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features ? Optimized package with separate driver source pin ? Lower profile TO-247-4 package body ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Typical Appl 文件：983.68 Kbytes 頁數(shù)：13 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0075120k-a/marking.html">C3M0075120K-A；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? 8mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery 文件：934.32 Kbytes 頁數(shù)：11 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0120065d/marking.html">C3M0120065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd Generation SiC MOSFET technology ? High blocking voltage with low on-resistance ? High speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? Higher system efficiency ? Reduced cooling requiremen 文件：929.18 Kbytes 頁數(shù)：11 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0120065j/marking.html">C3M0120065J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd Generation SiC MOSFET technology ? Low inductance package with driver source pin ? 7mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qr 文件：1.14795 Mbytes 頁數(shù)：11 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0120065k/marking.html">C3M0120065K；Package：TO-247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features ? C3MTM SiC MOSFET technology ? Optimized package with separate driver source pin ? 8mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? 文件：1.04703 Mbytes 頁數(shù)：12 Pages | WOLFSPEED | WOLFSPEED | ||
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Typical App 文件：898.5 Kbytes 頁數(shù)：13 Pages | WOLFSPEED | WOLFSPEED | ||
絲?。?a target="_blank" title="Marking" href="/c3m0120065l/marking.html">C3M0120065L；Package：TOLL；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Typical App 文件：898.5 Kbytes 頁數(shù)：13 Pages | WOLFSPEED | WOLFSPEED |
詳細(xì)參數(shù)
- 型號：
C3M
- 制造商：
CEL
- 制造商全稱：
CEL
- 功能描述：
BIPOLAR ANALOG INTEGRATED CIRCUIT
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
0526+ |
SOT363 |
1840 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NEC |
2023+ |
SOT363 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價 | ||
NEC |
23+ |
SOT363 |
1990 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NEC |
22+ |
SOT363 |
20000 |
公司只做原裝 品質(zhì)保證 |
詢價 | ||
NEC |
24+ |
SC70-6 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
NEC |
23+ |
SOT23-6 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NEC |
23+ |
SOT23-6 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
NEC |
23+ |
SC70-6 |
50000 |
原裝正品 支持實單 |
詢價 | ||
NEC |
2450+ |
SOT23-6 |
8850 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
NEC |
24+ |
SOT23-6 |
8000 |
只做自己庫存 全新原裝進口正品假一賠百 可開13%增 |
詢價 |
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