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          首頁(yè) >C3M>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          C3M0040120K1

          絲?。?a target="_blank" title="Marking" href="/c3m0040120k1/marking.html">C3M0040120K1;Package:TO-247-4L-LP;Silicon Carbide Power MOSFET N-Channel Enhancement Mode

          Features ? Optimized package with separate driver source pin ? Lower profile TO-247-4 package body ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ?

          文件:1.07762 Mbytes 頁(yè)數(shù):13 Pages

          WOLFSPEED

          C3M0045065D

          絲?。?a target="_blank" title="Marking" href="/to-247-3/marking.html">TO-247-3;Package:C3M0045065D;Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

          Features ? 3rd Generation SiC MOSFET technology ? High blocking voltage with low on-resistance ? High speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? Higher system efficiency ? Reduced cooling requiremen

          文件:960.72 Kbytes 頁(yè)數(shù):11 Pages

          WOLFSPEED

          C3M0045065J1

          絲?。?a target="_blank" title="Marking" href="/to-263-7lxl/marking.html">TO-263-7LXL;Package:C3M0045065J1;Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

          Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? R

          文件:1.02168 Mbytes 頁(yè)數(shù):11 Pages

          WOLFSPEED

          C3M0045065K

          絲?。?a target="_blank" title="Marking" href="/c3m0045065k/marking.html">C3M0045065K;Package:TO247-4;Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

          Features ? C3MTM SiC MOSFET technology ? Optimized package with separate driver source pin ? 8mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ?

          文件:1.08343 Mbytes 頁(yè)數(shù):12 Pages

          WOLFSPEED

          C3M0045065K

          SiC N-Channel MOSFET

          FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·UPS ·SMPS ·Motor drives

          文件:361.56 Kbytes 頁(yè)數(shù):3 Pages

          ISC

          無(wú)錫固電

          C3M0045065L

          Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

          Features ? 3rd generation SiC MOSFET technology ? Optimized package with separate driver source pin ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? R

          文件:976.1 Kbytes 頁(yè)數(shù):13 Pages

          WOLFSPEED

          C3M0060065D

          絲?。?a target="_blank" title="Marking" href="/c3m0060065d/marking.html">C3M0060065D;Package:TO-247-3;Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

          Features ? 3rd Generation SiC MOSFET technology ? High blocking voltage with low on-resistance ? High speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? Higher system efficiency ? Reduced cooling requiremen

          文件:1.07657 Mbytes 頁(yè)數(shù):11 Pages

          WOLFSPEED

          C3M0060065D

          SiC N-Channel MOSFET

          FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

          文件:437.34 Kbytes 頁(yè)數(shù):3 Pages

          ISC

          無(wú)錫固電

          C3M0060065J

          絲印:C3M0060065J;Package:TO-263-7;Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

          Features ? 3rd Generation SiC MOSFET technology ? Low inductance package with driver source pin ? 7mm of creepage distance between drain and source ? High blocking voltage with low on-resistance ? High speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qr

          文件:1.22367 Mbytes 頁(yè)數(shù):11 Pages

          WOLFSPEED

          C3M0060065K

          絲?。?a target="_blank" title="Marking" href="/c3m0060065k/marking.html">C3M0060065K;Package:TO-247-4;Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

          Features ? 3rd Generation SiC MOSFET technology ? High blocking voltage with low on-resistance ? High speed switching with low capacitances ? Fast intrinsic diode with low reverse recovery (Qrr) ? Halogen free, RoHS compliant Benefits ? Higher system efficiency ? Reduced cooling requiremen

          文件:1.291 Mbytes 頁(yè)數(shù):12 Pages

          WOLFSPEED

          詳細(xì)參數(shù)

          • 型號(hào):

            C3M

          • 制造商:

            CEL

          • 制造商全稱(chēng):

            CEL

          • 功能描述:

            BIPOLAR ANALOG INTEGRATED CIRCUIT

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          NEC
          0526+
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          更多C3M供應(yīng)商 更新時(shí)間2026-1-18 14:06:00
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