絲?。?strong>C3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? 12V...18V / 0V VGS compatible with most flyback controllers ? Ultra-low drain-gate capacitance ? Qualified to operate under high humidity and high temperature environmental conditions ? Ha

文件：4.69333 Mbytes 頁數(shù)：13 Pages

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分立式碳化硅肖特基二極管

1700 V, 900 m?, TO-247-3 package, Industrial qualified, Discrete Silicon Carbide (SiC) MOSFET ? 12-15V gate drive voltage\n? High speed switching with low capacitances\n? Wide creepage and clearance distance between drain and source;

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1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? 12V..18V / 0V VGS compatible with most flyback controllers ? Ultra-low drain-gate capacitance ? Qualified to operate under high humidity and high temperature environmental conditions ? Hal

文件：1.10312 Mbytes 頁數(shù)：13 Pages

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1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features ? High blocking voltage with low on-resistance ? High-speed switching with low capacitances ? 12V..18V / 0V VGS compatible with most flyback controllers ? Ultra-low drain-gate capacitance ? Qualified to operate under high humidity and high temperature environmental conditions ? Hal

文件：1.10312 Mbytes 頁數(shù)：13 Pages

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1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features ? Fully isolated package for simplified assembly ? High-speed switching with low capacitances ? High blocking voltage with low RDS(on) ? 12V..18V / 0V VGS compatible with most flyback controllers ? Ultra-low drain-gate capacitance ? Halogen free, RoHS compliant Typical Application

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