| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HIGH VOLTAGE POWER MOSFET N-CHANNEL [SEMICONDUCTOR TECHNOLOGY, INC.] 文件：25.74 Kbytes 頁(yè)數(shù)：2 Pages | ETCList of Unclassifed Manufacturers 未分類(lèi)制造商 | ETC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive 文件：332.74 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
SIPMOS Power Transistor (N channel Enhancement mode) ? N channel ? Enhancement mode 文件：207.83 Kbytes 頁(yè)數(shù)：9 Pages | SIEMENS 西門(mén)子 | SIEMENS | ||
SIPMOS Power Transistor (N channel Enhancement mode) ? N channel ? Enhancement mode 文件：199.04 Kbytes 頁(yè)數(shù)：9 Pages | SIEMENS 西門(mén)子 | SIEMENS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive 文件：333.22 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 2.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive 文件：333.64 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
SIPMOS Power Transistor (N channel Enhancement mode) ? N channel ? Enhancement mode 文件：203.84 Kbytes 頁(yè)數(shù)：9 Pages | SIEMENS 西門(mén)子 | SIEMENS | ||
Enhancement mode 文件：103.2 Kbytes 頁(yè)數(shù)：4 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Enhancement mode 文件：102.48 Kbytes 頁(yè)數(shù)：4 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
SIPMOS? Power Transistor ? N channel\n? Enhancement mode | Infineon 英飛凌 | Infineon |
詳細(xì)參數(shù)
- 型號(hào)：
BUZ50
- 制造商：
Solid State Devices Inc(SSDI)
- 功能描述：
TO 220 HV N-Channel Mosfet
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INT |
17+ |
TO-220 |
6200 |
100%原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
XI.M.Z |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
INFINEON |
23+ |
TO-220 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢(xún)價(jià) | ||
SIEMENS |
專(zhuān)業(yè)鐵帽 |
TO-220 |
67500 |
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
SIE |
24+ |
65230 |
詢(xún)價(jià) | ||||
INFINEON/英飛凌 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
2022+ |
TO220-2 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢(xún)價(jià) | ||
INFINEON |
1932+ |
TO-220 |
319 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
INFINEON |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單 |
詢(xún)價(jià) | ||
西門(mén)子 |
2023+環(huán)?，F(xiàn)貨 |
TO-220 |
10000 |
專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- BUZ50A220M
- BUZ51
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- BUZ58
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更多- BUZ50A220M-ISO
- BUZ53
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- BUZ61A
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- BUZ72A
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- BUZ72LSMD
- BUZ73
- BUZ73 H
- BUZ73A
- BUZ73A H
- BUZ73AE3046XK
- BUZ73AHXK
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- BUZ73E3046XK
- BUZ73H3046XKSA1
- BUZ73L H
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- BUZ74A
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- BUZ905D
