SIPMOS Power Transistor

? N channel ? Enhancement mode ? Avalanche-rated

文件：139.42 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This

文件：42.88 Kbytes 頁數(shù)：5 Pages

INTERSIL

SOA is Power Dissipation Limited

DESCRIPTION ·2.6A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device APPLICATIONS ·applications such as switching regulators, switching converters, motor drivers,relay driver

文件：67.27 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

? N channel ? Enhancement mode ? Avalanche-rated

文件：172.57 Kbytes 頁數(shù)：9 Pages

SIEMENS

西門子

2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This ty ? 2.6A, 400V\n? rDS(ON) = 2.500?\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Majority Carrier Device\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”?;

Renesas

瑞薩