13A, 50V, 0.120 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This t

文件：49.38 Kbytes 頁數(shù)：6 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：332.91 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ? Power Transistor ? N channel ? Enhancement mode ? Avalanche-rated

文件：130.25 Kbytes 頁數(shù)：9 Pages

SIEMENS

西門子

N - CHANNEL 50V - 0.1W - 13A TO-220 STripFET] POWER MOSFET

■ TYPICAL RDS(on)= 0.1? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIER

文件：79.23 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

文件：91.23 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：324.38 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 5.0V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：323.57 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS ? Power Transistor ? N channel ? Enhancement mode ? Avalanche-rated ? Logic Level

文件：128.38 Kbytes 頁數(shù)：9 Pages

SIEMENS

西門子

13A, 50V, 0.120 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This typ ? 13A, 50V\n? rDS(ON)= 0.120?\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Majority Carrier Device\n? Related Literature\n- TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”;

Renesas

瑞薩

Trans MOSFET N-CH 50V 13A 3-Pin(3+Tab) TO-220AB

NJS