60 V, 320 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protection

文件：864.87 Kbytes 頁數(shù)：16 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/ss/marking.html">SS；Package：SOT-323；nullN-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.98563 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD

文件：1.58549 Mbytes 頁數(shù)：16 Pages

NEXPERIA

安世

Advanced MOSFETprocess technology

Features and Benefits: ? Advanced MOSFETprocess technology ? Special designed for PWM, load switching and general purpose applications ? Ultra low on-resistance with low gate charge ? Fast switching and reverse body recovery ? 150℃ operating temperature Description: It utilizes the lates

文件：381.58 Kbytes 頁數(shù)：5 Pages

SILIKRON

新硅能微電子

絲?。?a target="_blank" title="Marking" href="/ss/marking.html">SS；Package：SOT-23；Plastic-Encapsulate MOSFETS

APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible -CAR for automotive and other

文件：1.75106 Mbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

Advanced MOSFETprocess technology

Features and Benefits: ? Advanced MOSFETprocess technology ? Special designed for PWM, load switching and general purpose applications ? Ultra low on-resistance with low gate charge ? Fast switching and reverse body recovery ? 150℃ operating temperature Description: It utilizes the lates

文件：381.85 Kbytes 頁數(shù)：5 Pages

SILIKRON

新硅能微電子

絲?。?a target="_blank" title="Marking" href="/k38/marking.html">K38；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

?Low On-Resistance:1.5 FEATURES ? Halogen-free According to IEC 61249-2-21 Definition Ω ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 25 ns ? Low Input and Output Leakage ? TrenchFET? Power MOSFET ? Compliant to RoHS Directive 2002/95/EC

文件：2.25313 Mbytes 頁數(shù)：6 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/k38/marking.html">K38；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ?Low On-Resistance:2.5 Ω ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 25 ns ? Low Input and Output Leakage ? TrenchFET? Power MOSFET ? Compliant to RoHS Directive 2002/95/EC

文件：2.25228 Mbytes 頁數(shù)：6 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/ss/marking.html">SS；Package：SOT-363；Dual N-Channel MOSFET

Feature ? High density cell design for extremely low RDS(on) ? Rugged and Relaible Application ? Direct Logic-Level Interface: TTL/CMOS ? Battery Operated Systems ? Solid-State Relays

文件：513.65 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

N-Channel MOSFET

Application ? Reverse Battery protection ? Load switch ? Power management ? Motor Control

文件：2.00371 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子