Power MOSFET 200 mA, 50 V

Power MOSFET 200 mA, 50 V N?Channel SOT?23 Typical applications are DC?DC converters, power management in portable and battery?powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features ? Low Threshold Voltage (VGS(th): 0.5 V?1.5 V) Make

文件：117.05 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/j1m/marking.html">J1M；Package：SOT-23；MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V

Features ? Low Threshold Voltage (VGS(th): 0.85 V?1.5 V) Makes it Ideal for Low Voltage Applications ? Miniature SOT?23 Surface Mount Package Saves Board Space ? HBM Class 0A, MM Class M1A, CDM Class IV (Note 3) ? BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Co

文件：265.56 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/sks/marking.html">SKs；Package：SOT-23；SIPMOS Small-Signal-Transistor

Features ? N-channel ? Enhancement mode ? Logic level ? dv /dt rated ? Pb-free lead-plating; RoHS compliant ? Qualified according to AEC Q101 ? Halogen free according to IEC61249-2-21

文件：230.2 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

SIPMOS? Small-Signal-Transistor

Features ? N-channel ? Enhancement mode ? Logic level ? dv /dt rated ? Pb-free lead-plating; RoHS compliant ? Qualified according to AEC Q101 ? Halogen free according to IEC61249-2-21

文件：463.57 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

60 V, 360 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFETtechn

文件：181.48 Kbytes 頁數(shù)：16 Pages

恩XP

絲?。?a target="_blank" title="Marking" href="/an/marking.html">AN；Package：TO-236AB；60 V, 360 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-

文件：742.21 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/j2x/marking.html">J2x；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.96489 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/138/marking.html">138；Package：SOT-363；MOSFET

Features - Low on-resistance. - Fast switching speed. - Low input capacitance.

文件：628.49 Kbytes 頁數(shù)：7 Pages

COMCHIP

典琦

絲印：NZ；Package：SC-88；60 V, 320 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog

文件：920.29 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/nzt/marking.html">NZt；Package：SOT23-6；Load Switch

Features VDS (V) = 60V RDS(ON)

文件：508.84 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體