N-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

文件：395.58 Kbytes 頁數(shù)：6 Pages

TSC

臺灣半導(dǎo)體

Small Signal MOSFET N-Channel

Features: * Low On-Resistance : 3.5Ω * Low Input Capacitance: 40PF * Low Out put Capacitance : 12PF * Low Threshole :1.5V * Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

文件：222.17 Kbytes 頁數(shù)：4 Pages

WEITRON

N-Channel 50-V(D-S) MOSFET

N-Channel 50-V(D-S) MOSFET FEATURE ● High density cell design for extremely low RDS(on) ● Rugged and Relaible APPLICATION ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relays, Solenoids, Lamps, Hammers,Display, ● Memories, Transistors, etc. ● Battery Operated Systems ● Solid-State R

文件：1.16708 Mbytes 頁數(shù)：5 Pages

JIANGSU

長電科技

N-Channel MOSFET

■ Features ● VDS (V) = 50V ● ID = 200 mA (VGS = 10V) ● RDS(ON)

文件：828.61 Kbytes 頁數(shù)：3 Pages

KEXIN

科信電子

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

文件：289.27 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

50V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? RDS(ON), [email protected],IDS@100mA=6Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated System

文件：114.76 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS? Small-Signal Transistor ? N channel ? Enhancement mode ? Logic Level ? VGS(th) = 0.8...2.0V

文件：138.1 Kbytes 頁數(shù)：8 Pages

SIEMENS

西門子

Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON)

文件：414.9 Kbytes 頁數(shù)：8 Pages

SILIKRON

新硅能微電子

絲印：SS；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features High density cell design for extremely low Rpson) Rugged and Relaible

文件：1.27011 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

N-Channel Enhancement Mode MOSFET

Feature ● 50V/0.2A, RDS(ON) = 3.5Ω(MAX) @VGS = 5V. Id = 0.2A RDS(ON) = 10Ω(MAX) @VGS = 2.75V. Id = 0.2A ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● Low Threshold Voltage ( 0.5V—1.5V ) Make it Ideal for Low Voltage Applications. ● SOT-23 for Surf

文件：295.08 Kbytes 頁數(shù)：3 Pages

ZPSEMIZP Semiconductor

至尚臻品