絲?。?a target="_blank" title="Marking" href="/138/marking.html">138；Package：SOT-323；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged,reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as sm

文件：217.99 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

SIPMOS Small-Signal-Transistor

Features ? N-channel ? Enhancement mode ? Logic level ? dv /dt rated ? Pb-free lead-plating; RoHS compliant

文件：196.07 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for High Reliability

文件：90.54 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

Features ? Halogen free available upon request by adding suffix -HF ? High dense cell design for extremely low RDS(ON) ? Rugged and reliable ? Lead free product is acquired ? SOT-323 Package ? Marking Code: SS ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1

文件：366.79 Kbytes 頁數(shù)：4 Pages

MCC

絲?。?a target="_blank" title="Marking" href="/ss/marking.html">SS；Package：SOT-323；N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

文件：237.18 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

Nch 60V 310mA Small Signal MOSFET

Features 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5) Halogen Free. Application Switching circuits Low-side loadswitch Relay driver

文件：4.61783 Mbytes 頁數(shù)：14 Pages

ROHM

羅姆

Advanced MOSFET process technology

Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v

文件：469.34 Kbytes 頁數(shù)：6 Pages

SILIKRON

新硅能微電子

絲印：SS；Package：SOT-323；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

文件：1.62694 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/j1/marking.html">J1；Package：SOT-323；N-Channel POW

Description: Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features: Simple Drive Requirement Small Package Outline

文件：563.74 Kbytes 頁數(shù)：5 Pages

GWSEMI

唯圣電子

絲?。?a target="_blank" title="Marking" href="/ss/marking.html">SS；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.98104 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子