60 V, 320 mA dual N-channel Trench MOSFET

General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ AEC-

文件：374.19 Kbytes 頁數(shù)：16 Pages

恩XP

絲印：NZt；Package：SOT23-6；MOSFET

Features RDS(ON)

文件：635.39 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

絲印：XJ；Package：SC-70；60 V, 320 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology A

文件：904.93 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/ss/marking.html">SS；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance N-Channel MOSFET Low input capacitance Fast switching speed ESD Protection

文件：1.98353 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138Q is suitable for automotive applications requiring

文件：592.33 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導體

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

文件：387.49 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/k38/marking.html">K38；Package：SOT23；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138Q is suitable for automotive applications requiring

文件：592.33 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導體

絲印：SS；Package：SOT-523；Plastic-Encapsulate MOSFETS

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

文件：298.62 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits ? BVDSS > 50V ? RDS(on) ≤ 3.5Ω @ VGS= 5V ? Maximum continuous drain current ID = 200mA ? “Lead Free”, RoHS Compliant (Note 1) ? Halogen and Antimony Free. Green Device (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability

文件：104.43 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導體

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Lead Free/RoHS Compliant (Note 4) ? Green Device (Note 5 and 6)

文件：150.95 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導體