N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for High Reliability

文件：90.54 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導(dǎo)體

絲印：138；Package：SOT-323；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged,reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as sm

文件：217.99 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

SIPMOS Small-Signal-Transistor

Features ? N-channel ? Enhancement mode ? Logic level ? dv /dt rated ? Pb-free lead-plating; RoHS compliant

文件：196.07 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Lead Free/RoHS Compliant (Note 4) ? Green Device (Note 5 and 6)

文件：150.95 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

Features ? Halogen free available upon request by adding suffix -HF ? High dense cell design for extremely low RDS(ON) ? Rugged and reliable ? Lead free product is acquired ? SOT-323 Package ? Marking Code: SS ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1

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MCC

Nch 60V 310mA Small Signal MOSFET

Features 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5) Halogen Free. Application Switching circuits Low-side loadswitch Relay driver

文件：4.61783 Mbytes 頁數(shù)：14 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/ss/marking.html">SS；Package：SOT-323；N-Channel 50-V(D-S) MOSFET

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays

文件：237.18 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

Advanced MOSFET process technology

Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v

文件：469.34 Kbytes 頁數(shù)：6 Pages

SILIKRON

新硅能微電子

絲?。?a target="_blank" title="Marking" href="/ss/marking.html">SS；Package：SOT-323；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE High density cell design for extremely low RDS(on) Rugged and Relaible

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DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/j1/marking.html">J1；Package：SOT-323；N-Channel POW

Description: Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features: Simple Drive Requirement Small Package Outline

文件：563.74 Kbytes 頁數(shù)：5 Pages

GWSEMI

唯圣電子