Power LDMOS transistor

文件：460.5 Kbytes 頁數(shù)：18 Pages

PHI

PHI

Power LDMOS transistor

文件：255.28 Kbytes 頁數(shù)：12 Pages

PHI

PHI

Power LDMOS transistor

文件：252.82 Kbytes 頁數(shù)：12 Pages

PHI

PHI

Power LDMOS transistor

文件：252.67 Kbytes 頁數(shù)：12 Pages

PHI

PHI

Base station LDMOS transistor

DESCRIPTION\n125 W LDMOS power transistor for base station\napplications at frequencies from 800 MHz to 1000 MHz.FEATURES\n? Typical performance at a supply voltage of 27 V:\n– 1-tone CW; IDQ = 1000 mA\n– Output power = 125 W\n– Gain = 16.5 dB\n– Efficiency = 54%\n– EDGE output power = 45 W (AV) ? Typical performance at a supply voltage of 27 V:\n– 1-tone CW; IDQ = 1000 mA\n– Output power = 125 W\n– Gain = 16.5 dB\n– Efficiency = 54%\n– EDGE output power = 45 W (AV)\n– ACPR400 = ?64 dBc at 400 kHz\n(EDGE; IDQ = 750 mA)\n– EVM = 2% rms (AV)\n(EDGE; IDQ = 750 mA)\n? Easy power control;

恩XP

場效應(yīng)管(MOSFET)

Ampleon

安譜隆

場效應(yīng)管(MOSFET)

Ampleon

安譜隆

Package：SOT-538A；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 65V 18.5DB SOT538A

Ampleon USA Inc.

Package：SOT-467C；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 65V 14DB SOT467C

Ampleon USA Inc.

Package：SOT-467C；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 65V 14DB SOT467C

Ampleon USA Inc.