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          首頁 >BLF10>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BLF10

          Axial Lead and Cartridge Fuses - Midget

          文件:78.82 Kbytes 頁數(shù):1 Pages

          LITTELFUSE

          力特

          BLF1043

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF1043

          UHF power LDMOS transistor

          DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on mounting b

          文件:52.67 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          BLF1046

          UHF power LDMOS transistor

          DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside el

          文件:43.16 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          BLF1046

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF1047

          UHF power LDMOS transistor

          DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside el

          文件:44.91 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          BLF1048

          UHF power LDMOS transistor

          DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside el

          文件:45.27 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          BLF1049

          Base station LDMOS transistor

          DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. FEATURES ? Typical performance at a supply voltage of 27 V: – 1-tone CW; IDQ = 1000 mA – Output power = 125 W – Gain = 16.5 dB – Efficiency = 54 – EDGE outpu

          文件:110.73 Kbytes 頁數(shù):12 Pages

          PHI

          PHI

          PHI

          BLF10H6600P

          Power LDMOS transistor

          General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ? Excellent ruggedness (VSWR ? 40 : 1 through all phase

          文件:1.51826 Mbytes 頁數(shù):18 Pages

          AMPLEON

          安譜隆

          BLF10H6600PS

          Power LDMOS transistor

          General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ? Excellent ruggedness (VSWR ? 40 : 1 through all phase

          文件:1.51826 Mbytes 頁數(shù):18 Pages

          AMPLEON

          安譜隆

          技術(shù)參數(shù)

          • GP (dB):

            20.8

          • Die Technology:

            LDMOS

          • VDS (V):

            50.0

          • ηD (%):

            46.0

          • PL(1dB) (W):

            600.0

          • PL(1dB) (dBm):

            57.8

          • Test Signal:

            2-Tone

          • Fmin (MHz):

            400

          • Fmax (MHz):

            1000

          • Status:

            Not for design in

          • Matching:

            I

          供應(yīng)商型號品牌批號封裝庫存備注價格
          PHI
          23+
          高頻管
          350
          專營高頻管模塊,全新原裝!
          詢價
          PH
          24+
          580
          詢價
          PHI
          23+
          TO-59
          8510
          原裝正品代理渠道價格優(yōu)勢
          詢價
          恩XP
          1430+
          原裝正品
          5800
          全新原裝,公司大量現(xiàn)貨供應(yīng),絕對正品
          詢價
          PHI
          24+
          高頻管
          600
          原裝現(xiàn)貨假一罰十
          詢價
          恩XP
          2016+
          SOT238A
          3900
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          恩XP
          24+
          SMD
          5000
          只做原裝公司現(xiàn)貨
          詢價
          MOTOROLA
          25+
          2789
          全新原裝自家現(xiàn)貨!價格優(yōu)勢!
          詢價
          恩XP
          24+
          SMD
          1680
          NXP專營品牌進(jìn)口原裝現(xiàn)貨假一賠十
          詢價
          恩XP
          25+23+
          SOT538A
          36410
          絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價
          更多BLF10供應(yīng)商 更新時間2026-1-19 16:33:00
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