絲?。?a target="_blank" title="Marking" href="/rfs/marking.html">RFs；Package：SOT-363；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor ? For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ? fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ? Two (galvanic) internal isolated Transistors in one package ? For orientation in reel see package information below ? Ea

文件：60.19 Kbytes 頁(yè)數(shù)：6 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor ? For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA ? fT = 8 GHz F = 1.2 dB at 900 MHz ? Two (galvanic) internal isolated Transistors in one package

文件：62.16 Kbytes 頁(yè)數(shù)：6 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)

NPN Silicon RF Transistor ? For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA ? fT = 8 GHz F = 1.2 dB at 900 MHz ? Two (galvanic) internal isolated Transistors in one package

文件：53.41 Kbytes 頁(yè)數(shù)：6 Pages

SIEMENS

西門子

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor ? For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA ? fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ? Two (galvanic) internal isolated Transistor in one package ? For orientation in reel see package information below ? Pb-fr

文件：60.61 Kbytes 頁(yè)數(shù)：6 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA)

NPN Silicon RF Transistor ? For low-noise, high-gain broadband amplifier at collector currents from 2 mA to 28 mA ? fT = 8 GHz F = 1.2 dB at 900 MHz ? Two (galvanic) internal isolated Transistors in one package

文件：53.71 Kbytes 頁(yè)數(shù)：6 Pages

SIEMENS

西門子

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. FEATURES ? Low current consumption ? High power gain ? Low nois

文件：113.88 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. FEATURES ? High power gain ? Low noise figure ? High transition fre

文件：113.71 Kbytes 頁(yè)數(shù)：11 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 6 V, IC = 5 mA, f = 900 MHz ·High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 6 V, IC = 20 mA, f = 1 GHz APPLICATIONS ·Designed for wideband applications such as satellite TV tuners,cellular phones, cordless p

文件：195.46 Kbytes 頁(yè)數(shù)：7 Pages

ISC

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