| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN Silicon RF Transistor Description Ultra high frequency low noise transistor, planar NPN silicon Epitaxial bipolar process. With high power gain, low noise figure, large dynamic range and ideal current characteristics, the use of SOT -323 ultra compact chip package, mainly used in the VHF, UHF and CATV high frequency w 文件：530.28 Kbytes 頁數(shù)：3 Pages | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
絲?。?a target="_blank" title="Marking" href="/n2/marking.html">N2；Package：SOT-323；NPN Transistor FEATURES ? Collector Current Capability IC=70mA ? Collector Emitter Voltage VCEO=15V ? High power gain ? Low noise figure ? High transition frequency MECHANICAL DATA ? Case: SOT-323(SC-70-3) 文件：847.88 Kbytes 頁數(shù)：7 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES ? High power gain ? Low noise figure ? High transition frequency 文件：115 Kbytes 頁數(shù)：11 Pages | PHI PHI | PHI | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁數(shù)：130 Pages | 恩XP | 恩XP | ||
Low Noise Figure DESCRIPTION ? Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz ? High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 8 V, lc = 40 mA, f = 1GHz APPLICATIONS ? Designed for RF wideband amplifier applications such as satellite TV systems and RF portable 文件：253 Kbytes 頁數(shù)：7 Pages | ISC 無錫固電 | ISC | ||
Silicon NPN RF Transistor DESCRIPTION ? Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz ? High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 8 V, lc = 40 mA, f = 1GHz APPLICATIONS ? Designed for RF wideband amplifier applications such as satellite TV systems and RF portable 文件：81.52 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Small Signal Transistors
文件：56.45 Kbytes 頁數(shù)：1 Pages | CENTRAL | CENTRAL | ||
Small Signal Transistors
文件：56.45 Kbytes 頁數(shù)：1 Pages | CENTRAL | CENTRAL | ||
2 AMP FAST RECOVERY BRIDGE RECTIFIERS FEATURES * PRV Ratings from 50to 1000 Voits * Surgo overioad rating to 50 Amps poak * Roliablo low cost moldod plastic construction * Idoal for printed circult board applications * Fastswitching for high officioncy 文件：46.79 Kbytes 頁數(shù)：1 Pages | DIOTEC 德歐泰克 | DIOTEC | ||
VGA output for 2nd monitor 文件：434.53 Kbytes 頁數(shù)：2 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC |
產(chǎn)品屬性
- 產(chǎn)品編號：
SMCJ48C
- 制造商：
Littelfuse Inc.
- 類別：
電路保護(hù) > TVS - 二極管
- 系列：
SMCJ
- 包裝：
卷帶（TR）
- 類型：
齊納
- 電壓 - 反向斷態(tài)（典型值）：
48V
- 電壓 - 擊穿（最小值）：
50.49V
- 不同 Ipp 時電壓 - 箝位（最大值）：
81.27V
- 電流 - 峰值脈沖 (10/1000μs)：
19.4A
- 功率 - 峰值脈沖：
1500W（1.5kW）
- 電源線路保護(hù)：
無
- 應(yīng)用：
通用
- 工作溫度：
-55°C ~ 150°C（TJ）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
DO-214AB，SMC
- 供應(yīng)商器件封裝：
DO-214AB（SMCJ）
- 描述：
TVS DIODE 48VWM 81.27VC DO214AB
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MCC |
19+ |
SMC |
200000 |
詢價 | |||
MICROSEMI/美高森美 |
23+ |
SMC |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
VISHAY |
DO-214AB(SMC) |
130000 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
24+ |
N/A |
64000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
UN SEMICONDUCTOR |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
DISCRETE |
850 |
GS |
17000 |
詢價 | |||
FAIRCHILD |
17+ |
DO-214AB |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
原廠 |
23+ |
DO-214AB |
5000 |
原裝正品,假一罰十 |
詢價 | ||
FAIRCHILD |
24+ |
原封裝 |
1580 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
FAIRCHILD |
24+ |
原廠原封 |
6523 |
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品 |
詢價 |
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