NPN 5 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. FEATURES ? Low current consumption ? Low noise figure ? Gold metallization ensures excellent reliability ? SOT323

文件：126.55 Kbytes 頁數(shù)：11 Pages

PHI

PHI

NPN 5 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. FEATURES ? Low current consumption ? Low noise figure ? Gold metallization ensures excellent reliability ? SOT323

文件：126.55 Kbytes 頁數(shù)：11 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data ? High current capability and low figure for wide dynamic range application ? Low voltage operation ? Ideal for low phase noise oscillators up to 3.5 GHz ? Low noise figure: 1.1 dB at 1.8 GHz ? Built in 2 transistors ( TR1, TR2: die as BFR380L3)

文件：98.94 Kbytes 頁數(shù)：3 Pages

INFINEON

英飛凌

NPN Silicon RF TWIN Transistor

NPN Silicon RF TWIN Transistor ? High fT of 22 GHz ? For low voltage / low current applications ? Ideal for VCO modules and low noise amplifiers ? Low noise figure: 1.1 dB at 1.8 GHz ? Worlds smallest SMD 6-pin leadless package ? Excellent ESD performance ? Built in 2 transistors (TR1, TR2:

文件：129.009 Kbytes 頁數(shù)：3 Pages

INFINEON

英飛凌

NPN Silicon RF TWIN Transistor

NPN Silicon RF TWIN Transistor* ??????? ? Low voltage/ low current applications ? Ideal for VCO modules and low noise amplifiers ? Worlds smallest SMD 6-pin leadless package ? Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR360L3) ? Low noise fi

文件：85.36 Kbytes 頁數(shù)：4 Pages

INFINEON

英飛凌

NPN Silicon RF TWIN Transistor

NPN Silicon RF TWIN Transistor* ? Low voltage/ low current applications ? Ideal for VCO modules and low noise amplifiers ? Worlds smallest SMD 6-pin leadless package ? Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3) ? Low noise figure: TR1

文件：59.01 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

NPN Silicon RF Transistor ? For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA ? fT = 7GHz F = 1.5dB at 900MHz ? Two (galvanic) internal isolated Transistors in one package

文件：52.25 Kbytes 頁數(shù)：6 Pages

SIEMENS

西門子

絲?。?a target="_blank" title="Marking" href="/res/marking.html">REs；Package：SOT-363；NPN Silicon RF Transistor

NPN Silicon RF Transistor ? For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA ? fT = 7GHz F = 1.5dB at 900MHz ? Two (galvanic) internal isolated Transistors in one package

文件：58.78 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

NPN Silicon RF Transistor ? For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA ? fT = 8 GHz F = 1.4 dB at 900 MHz ? Two (galvanic) internal isolated Transistors in one package

文件：53.43 Kbytes 頁數(shù)：6 Pages

SIEMENS

西門子