絲?。?strong>BFM；Package：SMC；1-Line, 1500W, TVS

文件：462.39 Kbytes 頁數(shù)：3 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

Dual NPN wideband transistor

DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and sat

文件：92.89 Kbytes 頁數(shù)：10 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

Dual NPN wideband transistor

DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers an

文件：96.58 Kbytes 頁數(shù)：10 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

Dual NPN wideband transistor

文件：71.45 Kbytes 頁數(shù)：10 Pages

JMNIC

錦美電子

Dual NPN wideband transistor

文件：71.45 Kbytes 頁數(shù)：10 Pages

JMNIC

錦美電子

絲?。?a target="_blank" title="Marking" href="/bfmt/marking.html">BFMT；Package：DO-214AB；1500W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 1500W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature sold

文件：2.88766 Mbytes 頁數(shù)：6 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲印：BFMA；Package：DO-214AB；10 To 78V 1500W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1500W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time

文件：2.88759 Mbytes 頁數(shù)：6 Pages

UNSEMI

優(yōu)恩半導(dǎo)體