Dual NPN wideband transistor

DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers an

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

雙NPN寬頻帶晶體管

雙晶體管，具有兩個(gè)硅NPN RF芯片，采用表面貼裝6針SOT363 (S-mini)封裝。該類晶體管主要設(shè)計(jì)用于RF前端GHz范圍內(nèi)的寬帶應(yīng)用，比如模擬和數(shù)字移動(dòng)電話、無(wú)繩電話、雷達(dá)探測(cè)器、傳呼機(jī)和衛(wèi)星電視調(diào)諧器。 雙器件\n金屬化鍍金確保極佳的可靠性\n高增益\n低噪聲\n小型封裝;

恩XP

NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

NPN Silicon RF Transistor Preliminary data ? For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB ? For oscillators up to 15 GHz ? Transition frequency fT = 45 GHz ? Gold metalization for high reliability ? SIEGET ? 45 - Line

文件：48.56 Kbytes 頁(yè)數(shù)：8 Pages

SIEMENS

西門(mén)子

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor ? Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage ? Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz ? High gain and low noise at high frequencies due to high transit frequ

文件：92.84 Kbytes 頁(yè)數(shù)：8 Pages

INFINEON

英飛凌

TRANZYSTORY NPN

[UNITRA CEMI] TRANZYSTORY NPN

文件：341.53 Kbytes 頁(yè)數(shù)：4 Pages

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