Dual NPN wideband transistor

DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and sat

文件：92.89 Kbytes 頁數：10 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數：130 Pages

恩XP

雙NPN寬頻帶晶體管

雙晶體管，具有兩個硅NPN RF芯片，采用表面貼裝6針SOT363 (S-mini)封裝。該類晶體管主要設計用于RF前端GHz范圍內的寬帶應用，比如模擬和數字移動電話、無繩電話、雷達探測器、傳呼機和衛(wèi)星電視調諧器。 雙器件\n金屬化鍍金確保極佳的可靠性\n高增益\n低噪聲\n小型封裝;

恩XP

Dual NPN wideband transistor

文件：71.45 Kbytes 頁數：10 Pages

JMNIC

錦美電子

Dual NPN wideband transistor

文件：71.45 Kbytes 頁數：10 Pages

JMNIC

錦美電子