RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor ? For highest gain and low noise amplifier ? Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz ? Pb-free (RoHS compliant) and halogen-free package with visible leads ? Qualification report according to AEC-Q101 available

文件：159.89 Kbytes 頁(yè)數(shù)：7 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor

文件：548.51 Kbytes 頁(yè)數(shù)：10 Pages

INFINEON

英飛凌

Low Noise Silicon Bipolar RF Transistor

文件：578.51 Kbytes 頁(yè)數(shù)：10 Pages

INFINEON

英飛凌