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首頁(yè) >BF1>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
BF1009S	文件：251.35 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode ? For low noise, high gain controlled input stage up to 1 GHz ? Operating voltage 9 V ? Integrated biasing network ? Pb-free (RoHS compliant) package1) ? Qualified according AEC Q101 文件：251.35 Kbytes 頁(yè)數(shù)：5 Pages	INFINEON 英飛凌	INFINEON
BF1009S	文件：51.89 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Silicon N-Channel MOSFET Tetrode ? For low noise, high gain controlled input stages up to 1GHz ? Operating voltage 9V ? Integrated bias network 文件：51.89 Kbytes 頁(yè)數(shù)：4 Pages	SIEMENS 西門子	SIEMENS
BF1009SR	文件：251.35 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode ? For low noise, high gain controlled input stage up to 1 GHz ? Operating voltage 9 V ? Integrated biasing network ? Pb-free (RoHS compliant) package1) ? Qualified according AEC Q101 文件：251.35 Kbytes 頁(yè)數(shù)：5 Pages	INFINEON 英飛凌	INFINEON
BF1009SW	文件：48.45 Kbytes Page：4 Pages	絲?。?a target="_blank" title="Marking" href="/jls/marking.html">JLs；Package：SOT343；Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network 文件：48.45 Kbytes 頁(yè)數(shù)：4 Pages	INFINEON 英飛凌	INFINEON
BF1012	文件：33.42 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Silicon N-Channel MOSFET Tetrode ? For low noise, high gain controlled input stages up to 1GHz ? Operating voltage 12V ? Integrated stabilized bias network 文件：33.42 Kbytes 頁(yè)數(shù)：4 Pages	SIEMENS 西門子	SIEMENS
BF1012S	文件：43.75 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Silicon N-Channel MOSFET Tetrode ? For low noise, high gain controlled input stages up to 1GHz ? Operating voltage 5V ? Integrated stabilized bias network 文件：43.75 Kbytes 頁(yè)數(shù)：4 Pages	SIEMENS 西門子	SIEMENS
BF1012W	文件：359.34 Kbytes Page：3 Pages	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) SILICON N-CHANNEL MOSFET TETRODE ? For low-noise, gain-controlled input stages up to 1GHz ? Operating voltage 12V ? Integrated bias Network 文件：359.34 Kbytes 頁(yè)數(shù)：3 Pages	SIEMENS 西門子	SIEMENS
BF1100	文件：311.53 Kbytes Page：15 Pages	Dual-gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES ? Sp 文件：311.53 Kbytes 頁(yè)數(shù)：15 Pages	恩XP	恩XP
BF1100	文件：159.54 Kbytes Page：14 Pages	Dual-gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES ? Sp 文件：159.54 Kbytes 頁(yè)數(shù)：14 Pages	PHI PHI	PHI
BF1100R	文件：159.54 Kbytes Page：14 Pages	Dual-gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES ? Sp 文件：159.54 Kbytes 頁(yè)數(shù)：14 Pages	PHI PHI	PHI

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技術(shù)參數(shù)

IDpuls(@25°C) max：
60 A
QG：
5.2 nC
RSS (on) typmax：
6 m?
VDDmax：
40 V
VDSmax：
40 V
Mounting：
SMT
ISS(@25°C) max：
14 A
ISS puls(@25°C) max：
60 A
Generation：
G3

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市煦洪科技有限公司	IGK080B041S	Infineon/英飛凌	25+	原廠封裝	10280	原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	IGKC75129-002	MAT	23+	QFN	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市賽美科科技有限公司	IG-L03A2-PA	DIT		100Box	56520	一級(jí)代理原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨	詢價(jià)
艾睿（深圳）半導(dǎo)體有限公司	IGLD60R070D1	Infineon(英飛凌)	2447	PG-LSON-8-1	115000	3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,	詢價(jià)
深圳市河鋒鑫科技有限公司	IGLD60R070D1	Infineon/英飛凌	2021+	PG-LSON-8-1	9600	原裝現(xiàn)貨，歡迎詢價(jià)	詢價(jià)
深圳市斌能達(dá)電子科技有限公司	IGLD60R070D1	Infineon/英飛凌	24+	PG-LSON-8-1	6000	全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成	詢價(jià)
深圳市富利微電子科技有限公司	IGLD60R070D1	Infineon/英飛凌	24+	PG-LSON-8-1	30000	原裝正品公司現(xiàn)貨,假一賠十!	詢價(jià)
深圳市恒凱威科技開發(fā)有限公司	IGLD60R070D1	Infineon/英飛凌	21+	PG-LSON-8-1	6820	只做原裝,質(zhì)量保證	詢價(jià)
深圳市力仕科電子科技有限公司	IGLD60R070D1	Infineon/英飛凌	25	PG-LSON-8-1	6000	原裝正品	詢價(jià)
深圳市中賽美電子科技有限公司	IGLD60R070D1	Infineon/英飛凌	23+	PG-LSON-8-1	12700	買原裝認(rèn)準(zhǔn)中賽美	詢價(jià)

更多BF1供應(yīng)商更新時(shí)間2026-1-19 15:15:00

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