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首頁(yè) >BF1>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
BF1100R	文件：311.53 Kbytes Page：15 Pages	Dual-gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES ? Sp 文件：311.53 Kbytes 頁(yè)數(shù)：15 Pages	恩XP	恩XP
BF1100WR	文件：471.96 Kbytes Page：16 Pages	Dual-gate MOS-FET FEATURES ? Specially designed for use at 9 to 12 V supply voltage ? Short channel transistor with high forward transfer admittance to input capacitance ratio ? Low noise gain controlled amplifier up to 1 GHz ? Superior cross-modulation performance during AGC. APPLICATIONS ? VHF and UHF appl 文件：471.96 Kbytes 頁(yè)數(shù)：16 Pages	恩XP	恩XP
BF1100WR	文件：146.38 Kbytes Page：14 Pages	Dual-gate MOS-FET DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES ? Special 文件：146.38 Kbytes 頁(yè)數(shù)：14 Pages	PHI PHI	PHI
BF1101	文件：128.13 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：128.13 Kbytes 頁(yè)數(shù)：16 Pages	PHI PHI	PHI
BF1101R	文件：128.13 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：128.13 Kbytes 頁(yè)數(shù)：16 Pages	PHI PHI	PHI
BF1101WR	文件：128.13 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：128.13 Kbytes 頁(yè)數(shù)：16 Pages	PHI PHI	PHI
BF1102	文件：154.37 Kbytes Page：12 Pages	Dual N-channel dual gate MOS-FET DESCRIPTION The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply volt 文件：154.37 Kbytes 頁(yè)數(shù)：12 Pages	PHI PHI	PHI
BF1102	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BF1102(R)	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BF1.52PM600	文件：15.37106 Mbytes Page：42 Pages	Fiber Optic Systems 文件：15.37106 Mbytes 頁(yè)數(shù)：42 Pages	BANNER 邦納電子	BANNER

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技術(shù)參數(shù)

IDpuls(@25°C) max：
60 A
QG：
5.2 nC
RSS (on) typmax：
6 m?
VDDmax：
40 V
VDSmax：
40 V
Mounting：
SMT
ISS(@25°C) max：
14 A
ISS puls(@25°C) max：
60 A
Generation：
G3

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市煦洪科技有限公司	IGK080B041S	Infineon/英飛凌	25+	原廠封裝	10280	原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	IGKC75129-002	MAT	23+	QFN	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市賽美科科技有限公司	IG-L03A2-PA	DIT		100Box	56520	一級(jí)代理原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨	詢價(jià)
艾睿（深圳）半導(dǎo)體有限公司	IGLD60R070D1	Infineon(英飛凌)	2447	PG-LSON-8-1	115000	3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,	詢價(jià)
深圳市河鋒鑫科技有限公司	IGLD60R070D1	Infineon/英飛凌	2021+	PG-LSON-8-1	9600	原裝現(xiàn)貨，歡迎詢價(jià)	詢價(jià)
深圳市斌能達(dá)電子科技有限公司	IGLD60R070D1	Infineon/英飛凌	24+	PG-LSON-8-1	6000	全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成	詢價(jià)
深圳市富利微電子科技有限公司	IGLD60R070D1	Infineon/英飛凌	24+	PG-LSON-8-1	30000	原裝正品公司現(xiàn)貨,假一賠十!	詢價(jià)
深圳市恒凱威科技開發(fā)有限公司	IGLD60R070D1	Infineon/英飛凌	21+	PG-LSON-8-1	6820	只做原裝,質(zhì)量保證	詢價(jià)
深圳市力仕科電子科技有限公司	IGLD60R070D1	Infineon/英飛凌	25	PG-LSON-8-1	6000	原裝正品	詢價(jià)
深圳市中賽美電子科技有限公司	IGLD60R070D1	Infineon/英飛凌	23+	PG-LSON-8-1	12700	買原裝認(rèn)準(zhǔn)中賽美	詢價(jià)

更多BF1供應(yīng)商更新時(shí)間2026-1-19 15:15:00

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