| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery 文件：78.05 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
N-Channel MOSFET DESCRIPTION · Drain Current -ID= 44A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 150mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch 文件：297.5 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switchi 文件：75.46 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? TO-2 文件：78.22 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV? SINGLE DIE ISOTOP? PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 文件：60.07 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? TO-2 文件：78.22 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
POWER MOS V FREDFET POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. 文件：136.87 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? TO-2 文件：78.22 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：310.22 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：361.04 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
詳細(xì)參數(shù)
- 型號：
APT80
- 功能描述：
MOSFET N-CH 800V 51A SOT-227
- RoHS：
是
- 類別：
半導(dǎo)體模塊 >> FET
- 系列：
POWER MOS 7®
- 標(biāo)準(zhǔn)包裝：
10
- 系列：
*
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MICROCHIP |
25+ |
20000 |
原廠微芯渠道.全新原裝! |
詢價 | |||
APT |
24+ |
ISOTOP |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
APT |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫存.價格優(yōu)勢!! |
詢價 | ||
Microch |
20+ |
NA |
33560 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
APT |
22+ |
SOT227 |
8000 |
原裝正品支持實單 |
詢價 | ||
APT |
2018 |
模塊 |
300 |
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！ |
詢價 | ||
Microsemi |
23+ |
標(biāo)準(zhǔn)封裝 |
5000 |
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保 |
詢價 | ||
APT |
23+ |
MODULE |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
APT |
2023+ |
MODULE |
259 |
主打螺絲模塊系列 |
詢價 | ||
24+ |
8866 |
詢價 |
相關(guān)規(guī)格書
更多- APT8011JLL
- APT8014JFLL
- APT8014JLL_03
- APT8014L2FLLG
- APT8014L2LL-03
- APT8015
- APT8015JVFR_05
- APT8016DFN
- APT8018
- APT8018JNFR
- APT8018L2VFRG
- APT8018L2VR_06
- APT801R2AN
- APT801R2BNR
- APT801R2DN
- APT801R4BN
- APT801R4CN
- APT8020B2FLLG
- APT8020B2LL_04
- APT8020JFLL
- APT8020JLL_04
- APT8020LFLLG
- APT8020LLLG
- APT8024B2FLLG
- APT8024B2LL_05
- APT8024B2VFR
- APT8024B2VFRG
- APT8024B2VR_04
- APT8024JFLL
- APT8024JLL_04
- APT8024LFLLG
- APT8024LLLG
- APT8024LVFRG
- APT8024LVRG
- APT802R4AN
- APT802R4CN
- APT8030
- APT8030B2VFR_05
- APT8030B2VR
- APT8030CFN
- APT8030FN
- APT8030JNFR
- APT8030JVFR_05
- APT8030LVFR
- APT8030LVFRG
相關(guān)庫存
更多- APT8011JLL_04
- APT8014JLL
- APT8014L2FLL
- APT8014L2LL
- APT8014L2LLG
- APT8015JVFR
- APT8015JVR
- APT8016DN
- APT8018JN
- APT8018L2VFR
- APT8018L2VR
- APT8018L2VRG
- APT801R2BN
- APT801R2CN
- APT801R4AN
- APT801R4BNR
- APT8020B2FLL
- APT8020B2LL
- APT8020B2LLG
- APT8020JLL
- APT8020LFLL
- APT8020LLL
- APT8024B2FLL
- APT8024B2LL
- APT8024B2LLG
- APT8024B2VFR_04
- APT8024B2VR
- APT8024B2VRG
- APT8024JLL
- APT8024LFLL
- APT8024LLL
- APT8024LVFR
- APT8024LVR
- APT8028JVR
- APT802R4BN
- APT802R4DN
- APT8030B2VFR
- APT8030B2VFRG
- APT8030B2VRG
- APT8030DN
- APT8030JN
- APT8030JVFR
- APT8030JVR
- APT8030LVFR_05
- APT8030LVR
