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          首頁 >APT8030>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          APT8030

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery

          文件:60.6 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8030

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          APT

          晶科電子

          APT8030B2VFR

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery

          文件:60.6 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8030B2VR

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switchi

          文件:58.26 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8030B2VR

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 27A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

          文件:360.53 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT8030JN

          N-Channel MOSFET Transistor

          FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC Motor Drives · Power Factor Correction (PFC)

          文件:539.47 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          APT8030JN

          N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          文件:61.61 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8030JVFR

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery

          文件:70.07 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8030JVFR

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery

          文件:69.08 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8030JVFR_05

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery

          文件:69.08 Kbytes 頁數(shù):4 Pages

          ADPOW

          詳細參數(shù)

          • 型號:

            APT8030

          • 制造商:

            ADPOW

          • 制造商全稱:

            Advanced Power Technology

          • 功能描述:

            Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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          ATP
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          25+23+
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          24444
          絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
          詢價
          更多APT8030供應(yīng)商 更新時間2026-1-18 9:16:00
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