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          首頁 >APT80>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          APT8075DN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:371.9 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT8075HN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

          文件:298.07 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT8090AN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

          文件:309.99 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT8090BN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

          文件:361.16 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT8090BN

          N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          文件:49.96 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8090HN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

          文件:298.02 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT80GA60B

          Power Semiconductors Power Modules RF Power MOSFETs

          POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon

          文件:2.83333 Mbytes 頁數(shù):44 Pages

          MICROSEMI

          美高森美

          APT80GA60LD40

          Power Semiconductors Power Modules RF Power MOSFETs

          POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon

          文件:2.83333 Mbytes 頁數(shù):44 Pages

          MICROSEMI

          美高森美

          APT80GA90B

          Power Semiconductors Power Modules RF Power MOSFETs

          POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon

          文件:2.83333 Mbytes 頁數(shù):44 Pages

          MICROSEMI

          美高森美

          APT80GA90LD40

          Power Semiconductors Power Modules RF Power MOSFETs

          POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon

          文件:2.83333 Mbytes 頁數(shù):44 Pages

          MICROSEMI

          美高森美

          詳細(xì)參數(shù)

          • 型號:

            APT80

          • 功能描述:

            MOSFET N-CH 800V 51A SOT-227

          • RoHS:

          • 類別:

            半導(dǎo)體模塊 >> FET

          • 系列:

            POWER MOS 7®

          • 標(biāo)準(zhǔn)包裝:

            10

          • 系列:

            *

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          MICROCHIP
          25+
          20000
          原廠微芯渠道.全新原裝!
          詢價(jià)
          APT
          24+
          ISOTOP
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價(jià)
          APT
          22+
          原廠原封
          8200
          原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!!
          詢價(jià)
          Microch
          20+
          NA
          33560
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價(jià)
          APT
          22+
          SOT227
          8000
          原裝正品支持實(shí)單
          詢價(jià)
          APT
          2018
          模塊
          300
          十七年VIP會員,誠信經(jīng)營,一手貨源,原裝正品可零售!
          詢價(jià)
          Microsemi
          23+
          標(biāo)準(zhǔn)封裝
          5000
          原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
          詢價(jià)
          APT
          23+
          MODULE
          7300
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          APT
          2023+
          MODULE
          259
          主打螺絲模塊系列
          詢價(jià)
          24+
          8866
          詢價(jià)
          更多APT80供應(yīng)商 更新時(shí)間2026-1-21 10:01:00
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