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          首頁 >絲印反查>65F6110

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IPA65R110CFD

          絲?。?strong>65F6110;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

          文件:3.85934 Mbytes 頁數(shù):20 Pages

          INFINEON

          英飛凌

          IPB65R110CFD

          絲?。?strong>65F6110;Package:PG-TO263;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

          文件:3.85934 Mbytes 頁數(shù):20 Pages

          INFINEON

          英飛凌

          IPI65R110CFD

          絲?。?strong>65F6110;Package:PG-TO262;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

          文件:3.85934 Mbytes 頁數(shù):20 Pages

          INFINEON

          英飛凌

          IPP65R110CFD

          絲?。?strong>65F6110;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

          文件:3.85934 Mbytes 頁數(shù):20 Pages

          INFINEON

          英飛凌

          IPW65R110CFD

          絲?。?strong>65F6110;Package:PG-TO247;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

          文件:3.85934 Mbytes 頁數(shù):20 Pages

          INFINEON

          英飛凌

          IPB655R110CFDA

          絲印:65F6110A;Package:PG-TO263; 650V CoolMos CFDA Power Transistor

          文件:2.33045 Mbytes 頁數(shù):16 Pages

          INFINEON

          英飛凌

          IPP655R110CFDA

          絲?。?a target="_blank" title="Marking" href="/65f6110a/marking.html">65F6110A;Package:PG-TO220; 650V CoolMos CFDA Power Transistor

          文件:2.33045 Mbytes 頁數(shù):16 Pages

          INFINEON

          英飛凌

          IPW655R110CFDA

          絲?。?a target="_blank" title="Marking" href="/65f6110a/marking.html">65F6110A;Package:PG-TO247; 650V CoolMos CFDA Power Transistor

          文件:2.33045 Mbytes 頁數(shù):16 Pages

          INFINEON

          英飛凌

          65F6110

          Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

          文件:3.85934 Mbytes 頁數(shù):20 Pages

          INFINEON

          英飛凌

          詳細參數(shù)

          • 型號:

            65F6110

          • 功能描述:

            MOSFET N-CH 700V 31.2A TO220

          • RoHS:

          • 類別:

            分離式半導(dǎo)體產(chǎn)品 >> FET - 單

          • 系列:

            CoolMOS™

          • 標(biāo)準包裝:

            1,000

          • 系列:

            MESH OVERLAY™ FET

          • 型:

            MOSFET N 通道,金屬氧化物 FET

          • 特點:

            邏輯電平門

          • 漏極至源極電壓(Vdss):

            200V 電流 - 連續(xù)漏極(Id) @ 25°

          • C:

            18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

          • C:

            180 毫歐 @ 9A,10V Id 時的

          • Vgs(th)(最大):

            4V @ 250µA 閘電荷(Qg) @

          • Vgs:

            72nC @ 10V 輸入電容(Ciss) @

          • Vds:

            1560pF @ 25V 功率 -

          • 最大:

            40W

          • 安裝類型:

            通孔

          • 封裝/外殼:

            TO-220-3 整包

          • 供應(yīng)商設(shè)備封裝:

            TO-220FP

          • 包裝:

            管件

          供應(yīng)商型號品牌批號封裝庫存備注價格
          INFINEON
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          Infineon(英飛凌)
          23+
          25900
          新到現(xiàn)貨,只有原裝
          詢價
          Infineon(英飛凌)
          25+
          TO-220
          21000
          原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。
          詢價
          Infineon(英飛凌)
          25+
          TO-220
          21000
          原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。
          詢價
          INFINEON
          2016+
          TO-220
          6989
          公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
          詢價
          Infineon
          24+
          NA
          3000
          進口原裝正品優(yōu)勢供應(yīng)
          詢價
          INFINOEN
          25+
          TO220-3
          90000
          一級代理進口原裝現(xiàn)貨、假一罰十價格合理
          詢價
          INFINEON
          24+
          TO-220
          65200
          一級代理/放心采購
          詢價
          Infineon(英飛凌)
          2447
          PG-TO220-3
          105000
          50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
          詢價
          原裝
          1923+
          TO-220
          8900
          公司原裝現(xiàn)貨特價長期供貨歡迎來電咨詢
          詢價
          更多65F6110供應(yīng)商 更新時間2026-1-21 13:00:00
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