絲?。?a target="_blank" title="Marking" href="/65f6110/marking.html">65F6110；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

文件：3.85934 Mbytes 頁(yè)數(shù)：20 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

? FEATURES ? With TO-263(D2PAK) packaging ? Ultra-fast body diode ? High speed switching ? Very high commutation ruggedness ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operationz ? APPLICATIONS ? Switching application

文件：317.44 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

文件：2.33045 Mbytes 頁(yè)數(shù)：16 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/65r110f7/marking.html">65R110F7；Package：PG-TO263-3；650V CoolMOS? CFD7 SJ Power Device

文件：1.28016 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌

500V-900V CoolMOS? N-Channel Power MOSFET

Replacement for 650V CoolMOS? CFD2?is 600V CoolMOS? CFD7\n 650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation ? 650V technology with integrated fast body diode\n? Limited voltage overshoot during hard commutation\n? Significant Qg reduction compared to 600V CFD technology\n? Tighter RDS(on) max to RDS(on) typ window\n? Easy to design-in\n? Lower price compared to 600V CFD technology\n\n優(yōu)勢(shì):\n? Low switching ;

Infineon

英飛凌

集成快速體二極管的 650V CoolMOS ? CFD7 超結(jié) MOSFET 是諧振高功率拓?fù)涞耐昝肋x擇

英飛凌的 650V CoolMOS ? CFD7 超結(jié) MOSFET IPB65R110CFD7 采用 D2PAK 封裝，非常適合工業(yè)應(yīng)用中的諧振拓?fù)洌绶?wù)器、電信、太陽(yáng)能和電動(dòng)汽車充電站，與競(jìng)爭(zhēng)對(duì)手相比，它可以顯著提高效率。作為 CFD2 SJ MOSFET 系列的后續(xù)產(chǎn)品，它具有降低的柵極電荷、改善的關(guān)斷行為和降低的反向恢復(fù)電荷，可實(shí)現(xiàn)最高的效率和功率密度以及額外的 50V 擊穿電壓。 ? CoolMOS ? 7 系列\(zhòng)n? 低存儲(chǔ)能量 COSS\n? 經(jīng)過現(xiàn)場(chǎng)驗(yàn)證的 CoolMOS ?質(zhì)量\n? 自 1998 年以來(lái)的 CoolMOS ?;

Infineon

英飛凌

20V-650V汽車級(jí)MOSFET

650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provide ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of ;

Infineon

英飛凌