Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

文件：3.85934 Mbytes 頁數(shù)：20 Pages

INFINEON

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絲?。?a target="_blank" title="Marking" href="/65f6110/marking.html">65F6110；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

文件：3.85934 Mbytes 頁數(shù)：20 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Suitable for resonant Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤110m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.75 Kbytes 頁數(shù)：2 Pages

ISC

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Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

文件：2.33045 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

絲印：65R110F7；Package：PG-TO247-3；650V CoolMOS? CFD7 SJ Power Device

文件：1.39045 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

500V-900V CoolMOS? N-Channel Power MOSFET

Replacement for 650V CoolMOS? CFD2?is 600V CoolMOS? CFD7\n 650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation ? 650V technology with integrated fast body diode\n? Limited voltage overshoot during hard commutation\n? Significant Qg reduction compared to 600V CFD technology\n? Tighter RDS(on) max to RDS(on) typ window\n? Easy to design-in\n? Lower price compared to 600V CFD technology\n\n優(yōu)勢:\n? Low switching ;

Infineon

英飛凌

650V CoolMOS? CFD7 超結(jié) MOSFET 采用 TO-247 封裝，集成快速體二極管，是諧振高功率拓?fù)浣Y(jié)構(gòu)的理想之選

\n優(yōu)勢:\n? 出色的硬換向穩(wěn)健性\n? 總線電壓提高，為設(shè)計提供額外安全裕度\n? 可實現(xiàn)更高的功率密度\n? 可在工業(yè)開關(guān)電源 (SMPS) 應(yīng)用中實現(xiàn)卓越輕載效率\n? 可在工業(yè)開關(guān)電源 (SMPS) 應(yīng)用中提高滿載效率\n? 相較于市面上的替代產(chǎn)品，價格更具競爭力;

Infineon

英飛凌

20V-650V汽車級MOSFET

650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provide ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of ;

Infineon

英飛凌