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          首頁 >絲印反查>65F6660

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IP165R660CFD

          絲?。?strong>65F6660;Package:PG-TO262;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

          文件:4.46997 Mbytes 頁數(shù):21 Pages

          INFINEON

          英飛凌

          IPA65R660CFD

          絲?。?strong>65F6660;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

          文件:4.46997 Mbytes 頁數(shù):21 Pages

          INFINEON

          英飛凌

          IPB65R660CFD

          絲印:65F6660;Package:PG-TO263;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

          文件:4.46997 Mbytes 頁數(shù):21 Pages

          INFINEON

          英飛凌

          IPD65R660CFD

          絲?。?strong>65F6660;Package:PG-TO252;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

          文件:4.46997 Mbytes 頁數(shù):21 Pages

          INFINEON

          英飛凌

          IPP65R660CFD

          絲印:65F6660;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

          文件:4.46997 Mbytes 頁數(shù):21 Pages

          INFINEON

          英飛凌

          IPW65R660CFD

          絲印:65F6660;Package:PG-TO247;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

          文件:4.46997 Mbytes 頁數(shù):21 Pages

          INFINEON

          英飛凌

          65F6660

          Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

          文件:4.46997 Mbytes 頁數(shù):21 Pages

          INFINEON

          英飛凌

          詳細參數(shù)

          • 型號:

            65F6660

          • 功能描述:

            MOSFET N-CH 700V 6.0A TO220

          • RoHS:

          • 類別:

            分離式半導體產(chǎn)品 >> FET - 單

          • 系列:

            CoolMOS™

          • 標準包裝:

            1,000

          • 系列:

            MESH OVERLAY™ FET

          • 型:

            MOSFET N 通道,金屬氧化物 FET

          • 特點:

            邏輯電平門

          • 漏極至源極電壓(Vdss):

            200V 電流 - 連續(xù)漏極(Id) @ 25°

          • C:

            18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

          • C:

            180 毫歐 @ 9A,10V Id 時的

          • Vgs(th)(最大):

            4V @ 250µA 閘電荷(Qg) @

          • Vgs:

            72nC @ 10V 輸入電容(Ciss) @

          • Vds:

            1560pF @ 25V 功率 -

          • 最大:

            40W

          • 安裝類型:

            通孔

          • 封裝/外殼:

            TO-220-3 整包

          • 供應商設備封裝:

            TO-220FP

          • 包裝:

            管件

          供應商型號品牌批號封裝庫存備注價格
          英飛翎
          17+
          TO-220
          31518
          原裝正品 可含稅交易
          詢價
          INFINEON
          24+
          TO-220
          5000
          只做原裝公司現(xiàn)貨
          詢價
          Infineon
          24+
          NA
          3315
          進口原裝正品優(yōu)勢供應
          詢價
          INFINEON
          23+
          TO-220
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          INFINEON
          20+
          TO-220
          36900
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          NEXPERIA/安世
          23+
          SOT669
          69820
          終端可以免費供樣,支持BOM配單!
          詢價
          Infineon(英飛凌)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
          詢價
          INFINEON
          25+
          TO-220
          10000
          原裝現(xiàn)貨假一罰十
          詢價
          INFINEON/英飛凌
          2022+
          5500
          原廠原裝,假一罰十
          詢價
          更多65F6660供應商 更新時間2026-1-20 14:00:00
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