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首頁(yè) >絲印反查>65C6600

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IP165R600C6	文件：2.09837 Mbytes Page：19 Pages	絲印：65C6600；Package：PG-TO262；650V CoolMOS C6 Power Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to 文件：2.09837 Mbytes 頁(yè)數(shù)：19 Pages	INFINEON 英飛凌	INFINEON
IPA65R600C6	文件：2.09837 Mbytes Page：19 Pages	絲?。?strong>65C6600；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to 文件：2.09837 Mbytes 頁(yè)數(shù)：19 Pages	INFINEON 英飛凌	INFINEON
IPB65R600C6	文件：2.09837 Mbytes Page：19 Pages	絲印：65C6600；Package：PG-TO263；650V CoolMOS C6 Power Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to 文件：2.09837 Mbytes 頁(yè)數(shù)：19 Pages	INFINEON 英飛凌	INFINEON
IPD65R600C6	文件：2.09837 Mbytes Page：19 Pages	絲?。?strong>65C6600；Package：PG-TO252；650V CoolMOS C6 Power Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to 文件：2.09837 Mbytes 頁(yè)數(shù)：19 Pages	INFINEON 英飛凌	INFINEON
IPP65R600C6	文件：2.09837 Mbytes Page：19 Pages	絲印：65C6600；Package：PG-TO220；650V CoolMOS C6 Power Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to 文件：2.09837 Mbytes 頁(yè)數(shù)：19 Pages	INFINEON 英飛凌	INFINEON
65C6600	文件：2.09837 Mbytes Page：19 Pages	650V CoolMOS C6 Power Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to 文件：2.09837 Mbytes 頁(yè)數(shù)：19 Pages	INFINEON 英飛凌	INFINEON

詳細(xì)參數(shù)

型號(hào)：
65C6600
功能描述：
MOSFET 650V CoolMOS C6 Power Transistor
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IPP65R600C6	英飛翎	17+	TO-220	31518	原裝正品可含稅交易	詢(xún)價(jià)
深圳市拓億芯電子有限公司	IPP65R600C6	INFINEON/英飛凌	25+	TO-220	15000	原裝現(xiàn)貨假一賠十	詢(xún)價(jià)
深圳市科恒偉業(yè)電子有限公司	IPP65R600C6	INFINEON/英飛凌	2450+	TO-220	9850	只做原裝正品現(xiàn)貨或訂貨假一賠十!	詢(xún)價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IPP65R600C6	INFINEON	17+	TO-220	6200	100%原裝正品現(xiàn)貨	詢(xún)價(jià)
深圳市華來(lái)深電子有限公司	IPP65R600C6	INFINE0N	23+	TO-220-3	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢(xún)價(jià)
深圳市華斯頓科技有限公司	IPP65R600C6	INFINEON	25+23+	TO-220	35208	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢(xún)價(jià)
深圳市賽芯源科技有限公司	IPP65R600C6	INFINEON	19+	TO-220	32000	原裝正品,現(xiàn)貨特價(jià)	詢(xún)價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IPP65R600C6	INFINEON	20+	TO-220	36900	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票	詢(xún)價(jià)
深圳市金芯陽(yáng)科技有限公司	IPP65R600C6	INFINEON	24+	TO-220	5850	全新原裝現(xiàn)貨	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	IPP65R600C6	INFINEON/英飛凌	23+	TO-220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)

更多65C6600供應(yīng)商更新時(shí)間2026-1-18 14:00:00

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